D.V. Forbes

A corner reflector InGaAs-GaAs strained layer single quantum well coupled laser array

J. Coleman, D. Forbes, G.M. Smith, 1994, IEEE Photonics Technology Letters.

Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD

J. Coleman, D. Forbes, R.M. Lammert, 1994, IEEE Photonics Technology Letters.

A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition

D. Ackley, J. Coleman, D. Forbes, 1994, IEEE Photonics Technology Letters.

In/sub x/Ga/sub 1-x/As-Al/sub y/Ga/sub 1-y/As-GaAs strained-layer quantum-well heterostructure circular ring lasers

J. Coleman, D. Forbes, H. Han, 1992, IEEE Photonics Technology Letters.

Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy

J. Coleman, D. Forbes, G.M. Smith, 1994, IEEE Photonics Technology Letters.

Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVD

S.M. Kang, P. Mena, J. Coleman, 1995, IEEE Photonics Technology Letters.

Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers

J. Coleman, J. Verdeyen, D. Forbes, 1993, IEEE Photonics Technology Letters.