Hidefumi Mori

Reduction of dislocation generation for heteroepitaxial III-V/Si by slow cooling

Masami Tachikawa, Hidefumi Mori, 1998 .

Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate

Yoshio Itoh, Masami Tachikawa, Mitsuo Yamamoto, 1990 .

1.5 µm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate

Yoshio Itoh, Masami Tachikawa, Y. Sakai, 1991 .

A new loss mechanism in ultralow loss optical fiber materials

Tatsuo Izawa, Hidefumi Mori, 1980 .

Hybrid OMVPE/VME for long-life lasers on Si

M. Sugo, Y. Itoh, Hidefumi Mori, 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

GaAs heteroepitaxy on an epitaxial Si surface with a low‐temperature process

Yoshio Itoh, Masami Tachikawa, Mitsuru Sugo, 1993 .

Integrated optoelectronic devices on Si substrates

Yoshio Itoh, Hidefumi Mori, M. Sugo, 1994 .

Deposited silica waveguide for intergrated optical circuits

Yasuji Murakami, Nobuo Shimizu, Tatsuo Izawa, 1981 .

The Scattering Centers in Dielectric Thin Film Optical Waveguides

Hidefumi Mori, Masayuki Itakura, 1975 .

Stable cw operation at room temperature of a 1.5‐μm wavelength multiple quantum well laser on a Si substrate

M. Sugo, Y. Sakai, Y. Itoh, 1992 .