G.G. Shahidi

A novel high-performance lateral bipolar on SOI

Y. Taur, D.D. Tang, B. Davari, 1991, International Electron Devices Meeting 1991 [Technical Digest].

High-performance devices for a 0.15- mu m CMOS technology

B. Davari, E. Crabbe, E. Ganin, 1993, IEEE Electron Device Letters.

Transient pass-transistor leakage current in SOI MOSFET's

L. Wagner, F. Assaderaghi, B. Davari, 1997, IEEE Electron Device Letters.

Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs

B. Davari, B. Clark, P. Coane, 1993, IEEE Electron Device Letters.

Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si MOSFET's

D. Antoniadis, G. Shahidi, D.A. Antoniadis, 1988, IEEE Electron Device Letters.

Anomalous voltage overshoot during turn-off of thin-film n-channel SOI MOSFETs

E. Dubois, E. Dubois, G. Shahidi, 1993, IEEE Electron Device Letters.

A high performance BiCMOS technology using 0.25 mu m CMOS and double poly 47 GHz bipolar

Y. Taur, P. Coane, D.D. Tang, 1992, 1992 Symposium on VLSI Technology Digest of Technical Papers.

Scaling of In0.7Ga0.3As buried-channel MOSFETs

Yanning Sun, J. Bucchignano, G. Shahidi, 2008, 2008 IEEE International Electron Devices Meeting.

Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers

H.I. Smith, D. Antoniadis, G. Shahidi, 1988, IEEE Electron Device Letters.

A 0.25 /spl mu/m CMOS SOI technology and its application to 4 Mb SRAM

R. Flaker, S. Ratanaphanyarat, E. Leobandung, 1997, International Electron Devices Meeting. IEDM Technical Digest.