J. A. Rossi

Room-Temperature Operation of GaInAsp/Inp Double-Heterostructure Diode Lasers Emitting at 1.1 µm*

Joseph P. Donnelly, J. J. Hsieh, J. Donnelly, 1976, Integrated Optics.

LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region

G. E. Stillman, Nick Holonyak, E. A. Rezek, 1977 .

Electroabsorption in GaAs and its application to waveguide detectors and modulators

G. E. Stillman, Carl O. Bozler, C. M. Wolfe, 1976 .

III-7 integrated GaAs-AlGaAs double-heterostructure lasers

J. J. Hsieh, C. E. Hurwitz, C. M. Wolfe, 1975 .