C. Lombardi

Two-dimensional numerical analysis of floating-gate EEPROM devices

S. Keeney, A. Concannon, Alan Mathewson, 1993 .

Complete transient simulation of flash EEPROM devices

S. Keeney, L. Ravazzi, D. Cantarelli, 1992 .

The numerical simulation of substrate and gate currents in MOS and EPROMs

F. Piccinini, A. Concannon, A. Mathewson, 1995, Proceedings of International Electron Devices Meeting.

Process Analysis using RSM and Simulation

M. Cecchetti, A. Marmiroli, C. Lombardi, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

Complete bipolar simulation using STORM

A. Gerodolle, C. Hill, M. Schafer, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Use of process and 2-D MOS simulation in the study of doping profile influence on S/D resistance in short channel MOSFET's

D. Antoniadis, P. Antognetti, D. Antoniadis, 1981, 1981 International Electron Devices Meeting.