Mau‐Tsu Tang

Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

Leonard C. Feldman, D. Brasen, Martin L. Green, 1994 .

Si/SiO2 interface roughness: Comparison between surface second harmonic generation and x-ray scattering

Wayne H. Knox, Martin L. Green, H. M. van Driel, 1997 .

Kinetic smoothening: Growth thickness dependence of the interface width of the Si(001)/SiO2 interface

G. S. Higashi, J. L. Dawson, D. Brasen, 1995 .