S.H. Voldman

The effect of deep trench and sub-collector on the latchup robustness in BiCMOS silicon germanium technology

A. Watson, S.H. Voldman, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

The impact of technology evolution and scaling on electrostatic discharge (ESD) protection in high-pin count high-performance microprocessors

S.H. Voldman, 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

ESD failure mechanisms of inductive and magnetoresistive recording heads

A. Wallash, S. Voldman, S.H. Voldman, 1996, Electrical Overstress/Electrostatic Discharge Symposium Proceedings.

Electrically Programmable Fuses for Analog and Mixed Signal Applications in Silicon Germanium BiCMOS Technologies

T. Kirihata, D. Coolbaugh, D. Coolbaugh, 2007, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

ESD robustness and scaling implications of aluminum and copper interconnects in advanced semiconductor technology

S.H. Voldman, 1997, Proceedings Electrical Overstress/Electrostatic Discharge Symposium.

Low-voltage diode-configured sige:C HBT triggered ESD power clamps using a raised extrinsic base 200/285 GHz (fT/fMAX) SiGe:C HBT device

S.H. Voldman, E.G. Gebreselasie, 2004, 2004 Electrical Overstress/Electrostatic Discharge Symposium.

The influence of deep trench and substrate resistance on the latchup robustness in a BiCMOS silicon germanium technology

A. Watson, S.H. Voldman, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Parasitic leakage in DRAM trench storage capacitor vertical gated diodes

A. Bryant, W.P. Noble, S.H. Voldman, 1987, 1987 International Electron Devices Meeting.

The effect of deep trench isolation, trench isolation and sub-collector doping on the electrostatic discharge (ESD) robustness of radio frequency (RF) ESD STI-bound P+/N-well diodes in BiCMOS silicon germanium technology

S.H. Voldman, 2003, 2003 Electrical Overstress/Electrostatic Discharge Symposium.

Electrostatic Discharge Protection in the Nano-Technology - Will We be able to Provide ESD Protection in the Future?

S. Voldman, S.H. Voldman, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.