Manhong Zhang

发表

Fabrication of TaN-gated ultra-thin MOSFETs (EOT <1.0 nm) with HfO/sub 2/ using a novel oxygen scavenging process for sub 65 nm application

Changhwan Choi, Chang Yong Kang, Se Jong Rhee, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Optimization and reliability characteristics of TiO/sub 2//HfO/sub 2/ multi-metal dielectric MOSFETs

Chang Yong Kang, Se Jong Rhee, Manhong Zhang, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Performance Improvement of Si-NC Memory Device by Using a Novel Junction Assisted Programming Scheme

Bo Zhang, Zongliang Huo, Manhong Zhang, 2011 .

Improved performance of Si-NC memory using a novel two-step program scheme

Dandan Jiang, Zongliang Huo, Manhong Zhang, 2010, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

A study of cycling induced degradation mechanisms in Si nanocrystal memory devices.

Dandan Jiang, Zongliang Huo, Manhong Zhang, 2011, Nanotechnology.

Improved electrical and material characteristics of hafnium titanate multi-metal oxide n-MOSFETs with ultra-thin EOT (/spl sim/8 /spl Aring/) gate dielectric application

Chang Yong Kang, Se Jong Rhee, Manhong Zhang, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Unification of three multiphonon trap-assisted tunneling mechanisms

Zongliang Huo, Manhong Zhang, Jing Liu, 2011 .

Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices

Dandan Jiang, Zongliang Huo, Bo Zhang, 2012, IEEE Electron Device Letters.

Effect of Damage in Source and Drain on the Endurance of a 65-nm-Node NOR Flash Memory

Zongliang Huo, Manhong Zhang, Shaobin Li, 2013, IEEE Transactions on Electron Devices.

Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device

Wei Wang, Manhong Zhang, Yan Wang, 2009 .

Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer

Zongliang Huo, Manhong Zhang, Wei Wang, 2010, IEEE Electron Device Letters.

Examination of the application of multiphonon models to the random telegraph signal noise in metal-oxide-semiconductor structures

Manhong Zhang, Ming Liu, 2013 .

Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer

Se Jong Rhee, Manhong Zhang, J.C. Lee, 2005, IEEE Electron Device Letters.

Material and electrical analysis of hafnium titania bilayer dielectric metal-oxide-semiconductor field-effect transistors

Chang Yong Kang, Se Jong Rhee, Manhong Zhang, 2005 .

Titanium-tungsten nanocrystals embedded in a SiO(2)/Al(2)O(3) gate dielectric stack for low-voltage operation in non-volatile memory.

Manhong Zhang, Shibing Long, Jing Liu, 2010, Nanotechnology.

Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer

Manhong Zhang, Injo Ok, S. Koveshnikov, 2006 .

A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

Manhong Zhang, Shibing Long, Ming Liu, 2010 .