W. Li

发表

The effect of post-growth rapid thermal annealing on InAs/InGaAs dot-in-a-well structure monolithically grown on Si

Y. Chen, I. Ross, L. Yang, 2019, Journal of Applied Physics.

Size anisotropy inhomogeneity effects in state-of-the-art quantum dot lasers

S. A. Sobhani, I. Ross, M. Sugawara, 2018, Applied Physics Letters.

Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon

M. Tang, I. Ross, J. Wu, 2018, Journal of Applied Physics.

Electroluminescence from mechanically damaged oxidized silicon

Jinhong Yuan, D. Haneman, W. Li, 1998 .

Dielectric spectroscopy of Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub0.48}O{sub 3} films on hastealloy substrates with and without LaNiO{sub 3} buffer layers.

B. Ma, M. Narayanan, U. Balachandran, 2010 .

Strain-induced changes in electronic structures and work function for (0 0 1), (1 1 0) and (1 1 1) of AlCu3

W. Li, S. D. Wang, 2011 .

Rupture luminescence from natural fibers

D. Haneman, W. Li, 1999 .

Strain induced extrinsic magnetocaloric effects in La0.67Sr0.33MnO3 thin films, controlled by magnetic field

T. K. Nath, J. MacManus‐Driscoll, T. Maity, 2019, Journal of Physics D: Applied Physics.

Isoelectronic centers and type-II quantum dots: Mechanisms for the green band emission in ZnSeTe alloy

C. Hsu, Y. H. Chang, L. Chang, 2009 .

Electroluminescence from laser-grooved silicon

D. Haneman, W. Li, D Haneman, 1998 .

Atomically resolved structure of vacuum-heated porous silicon

D. Haneman, W. Li, I. Andrienko, 2000 .