P. Novikov

发表

Structural features and conductivity of silicon films: Simulation and experiment

V. G. Shchukin, O. Semenova, R. Sharafutdinov, 2012, Journal of Structural Chemistry.

Specific behaviour of stress relaxation in GexSi1−x films grown on porous silicon based mesa substrates: computer calculations

O. Pchelyakov, Yu. B. Bolkhovityanov, L. Sokolov, 2003 .

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

Zh. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2008 .

Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

Zh. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2007 .

Simulation of porous silicon formation and silicon epitaxy on its surface

P. Novikov, 1999 .

Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates

Zh. V. Smagina, S. Rudin, P. Novikov, 2022, Journal of Crystal Growth.

Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

Zh. V. Smagina, A. Dvurechenskii, S. Rudin, 2018, Semiconductors.

Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms

A. Dvurechenskii, S. Rudin, P. Novikov, 2015, Nanotechnologies in Russia.

Ge/Si Nanostructures with Quantum Dots Grown by Ion-Beam-Assisted Heteroepitaxy

V. A. Zinoviev, J. V. Smagina, A. Dvurechenskii, 2010 .

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

J. V. Smagina, A. Dvurechenskii, A. Gutakovskii, 2005 .

Simulation of ion-irradiation stimulated Ge nanocluster formation in gate oxides containing GeO2

A. Larsen, A. Dvurechenskii, K. Heinig, 2002 .

Energy Surface of Pit-Patterned Templates for Growth of Space-Arranged Arrays of Quantum Dots – Molecular Dynamics Calculations Using High-Efficiency Algorithms

A. Dvurechenskii, P. Novikov, K. Pavsky, 2019, 2019 International Multi-Conference on Industrial Engineering and Modern Technologies (FarEastCon).

Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

A. V. Dvurechenskii, P. L. Novikov, Zh. V. Smagina, 2018 .

Morphology of porous silicon structures formed by anodization of heavily and lightly doped silicon

P. Novikov, L. Aleksandrov, 1998 .

Mechanism of silicon epitaxy on porous silicon layers

A. Dvurechenskii, V. Zinov’ev, P. Novikov, 1998 .

Mechanisms of formation and topological analysis of porous silicon — computational modeling

P. Novikov, L. Aleksandrov, 1998 .

Phenomenological model of nanocrystalline silicon film formation by plasma-enhanced chemical vapor deposition

S. Pizzini, H. Känel, D. Chrastina, 2009 .

Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

S. Pizzini, C. Cavallotti, H. Känel, 2009 .

Nucleation and epitaxial growth of Ge nanoislands on Si surface prepatterned by ion irradiation

Zh. V. Smagina, A. Dvurechenskii, V. Seleznev, 2013 .

Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2014 .

Space arrangement of Ge nanoislands formed by growth of Ge on pit-patterned Si substrates

J. V. Smagina, A. Dvurechenskii, A. Kozhukhov, 2011 .

Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2011 .

Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2022, Journal of Applied Physics.

SiGe Nanodots in Electro-Optical SOI Devices

A. Yakimov, A. Dvurechenskii, P. Novikov, 2007 .

Simulation of the formation of porous-silicon structures

P. Novikov, L. Aleksandrov, 1997 .

Study of Porous Silicon Formation and Silicon-on-Porous Silicon Epitaxy (Computational Modelling)

V. A. Zinoviev, A. Dvurechenskii, P. Novikov, 2000 .

Quick search of neighbour particles in molecular dynamics simulations

P. Novikov, A. Baranov, K. Pavsky, 2020, Journal of Physics: Conference Series.

Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2014 .

Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method

Zh. V. Smagina, A. Dvurechenskii, P. Novikov, 2014, Optoelectronics, Instrumentation and Data Processing.

Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation

V. A. Zinoviev, J. V. Smagina, A. Dvurechenskii, 2009 .