A. Ille

Reliability aspects of gate oxide under ESD pulse stress

H. Gossner, T. Pompl, K. Chatty, 2007 .

ESD time-domain characterization of high-k gate dielectric in a 32 nm CMOS technology

Souvick Mitra, Robert Gauthier, Elyse Rosenbaum, 2009, 2009 31st EOS/ESD Symposium.

Reliability aspects of gate oxide under ESD pulse stress

Thomas Pompl, Wolfgang Stadler, Kai Esmark, 2007, 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).

Ultra-thin gate oxide reliability in the ESD time domain

A. Bravaix, K. Esmark, T. Brodbeck, 2006, 2006 Electrical Overstress/Electrostatic Discharge Symposium.