Yang Yang

Degradation of High-$k$/Metal Gate nMOSFETs Under ESD-Like Stress in a 32-nm Technology

Junjun Li, K. Chatty, R. Gauthier, 2011, IEEE Transactions on Device and Materials Reliability.

Characterization of high-k/metal gate stack breakdown in the time scale of ESD events

Souvick Mitra, Yang Yang, Dimitris E. Ioannou, 2010, 2010 IEEE International Reliability Physics Symposium.

ESD time-domain characterization of high-k gate dielectric in a 32 nm CMOS technology

Souvick Mitra, Robert Gauthier, Elyse Rosenbaum, 2009, 2009 31st EOS/ESD Symposium.

Field effect diode memory cell: Physics and design

Z. Chbili, Qiliang Li, D. Ioannou, 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

Design and analysis of multi-gate field-effect-diodes for embedded memory

Z. Chbili, Qiliang Li, D. Ioannou, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Scaling of the SOI field effect diode (FED) for memory application

Dimitris E. Ioannou, Qiliang Li, Qiliang Li, 2009, 2009 International Semiconductor Device Research Symposium.

Design and optimization of the SOI field effect diode (FED)

D. Ioannou, A.A. Salman, S.G. Beebe, 2007, 2007 International Semiconductor Device Research Symposium.

The large-scale integration of high-performance silicon nanowire field effect transistors.

J. Suehle, C. Richter, Qiliang Li, 2009, Nanotechnology.

SOI Field-Effect Diode DRAM Cell: Design and Operation

Akram A. Salman, Qiliang Li, Yang Yang, 2013, IEEE Electron Device Letters.

Simulation of self-heating effects in different SOI MOS architectures

Enrico Sangiorgi, Claudio Fiegna, Yang Yang, 2009 .