E. Sgourou

发表

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Alexander Chroneos, E. N. Sgourou, A. Chroneos, 2014, Journal of Materials Science: Materials in Electronics.

Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

A. Chroneos, C. A. Londos, E. Sgourou, 2015, Journal of Materials Science: Materials in Electronics.

Infrared study of defects in nitrogen-doped electron irradiated silicon

A. Chroneos, C. A. Londos, E. Sgourou, 2016, Journal of Materials Science: Materials in Electronics.

Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

R. Vovk, A. Chroneos, C. A. Londos, 2014, Journal of Materials Science: Materials in Electronics.

Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior

A. Chroneos, C. A. Londos, E. Sgourou, 2014, Journal of Materials Science: Materials in Electronics.

Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

V. V. Emtsev, H. Ohyama, C. A. Londos, 2010 .

The Effect of Germanium Doping on the Production of Carbon–Related Defects in Electron-Irradiated Czochralski Silicon

V. V. Emtsev, H. Ohyama, C. A. Londos, 2009 .

An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

D. Caliste, P. Pochet, C. A. Londos, 2015 .

Modeling defect reactions processes to study the impact of carbon on the production and conversion of A-centers in silicon

A. Chroneos, C. A. Londos, E. Sgourou, 2014, Journal of Materials Science: Materials in Electronics.

Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

D. Caliste, P. Pochet, A. Chroneos, 2013 .

Impact of isovalent doping on radiation defects in silicon

V. V. Emtsev, P. Pochet, A. Chroneos, 2013 .

Production and evolution of A-centers in n-type Si1−xGex

A. Chroneos, C. A. Londos, E. Sgourou, 2013 .

Impact of isovalent defect engineering strategies on carbon-related clusters in silicon

A. Chroneos, C. A. Londos, E. Sgourou, 2013, Journal of Materials Science: Materials in Electronics.

Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective

A. Chroneos, C. A. Londos, E. Sgourou, 2012 .

Relative concentrations of carbon related defects in silicon

R. Vovk, A. Chroneos, D. Parfitt, 2016, Journal of Materials Science: Materials in Electronics.

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

A. Chroneos, E. Sgourou, T. Angeletos, 2022, Applied Sciences.

Modelling the Defect Processes of Materials for Energy Applications

Aspassia Daskalopulu, A. L. Solovjov, R. Vovk, 2022, Applied Sciences.

Seventy-Five Years since the Point-Contact Transistor: Germanium Revisited

Aspassia Daskalopulu, R. Vovk, A. Chroneos, 2022, Applied Sciences.

Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

A. Chroneos, C. A. Londos, E. Sgourou, 2015 .

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

A. Chroneos, C. A. Londos, E. Sgourou, 2011 .

Oxygen defect processes in silicon and silicon germanium

A. Chroneos, C. A. Londos, E. Sgourou, 2015 .

Interaction of n-type dopants with oxygen in silicon and germanium

A. Chroneos, C. A. Londos, E. Sgourou, 2012 .

IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon

V. V. Emtsev, H. Ohyama, C. A. Londos, 2011 .

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

C. A. Londos, E. Sgourou, T. Angeletos, 2017, Journal of Materials Science: Materials in Electronics.

Carbon, oxygen and intrinsic defect interactions in germanium-doped silicon

A. Chroneos, V. Emtsev, E. Sgourou, 2011 .

IR Studies on VON, CIOI and CICS Defects in Ge-Doped Cz-Si

V. V. Emtsev, H. Ohyama, C. A. Londos, 2011 .

IR studies of oxygen-related and carbon-related defects in Sn-doped silicon

H. Ohyama, C. A. Londos, E. Sgourou, 2011 .

Controlling A-center concentration in silicon through isovalent doping: mass action analysis

R. Vovk, A. Chroneos, D. Parfitt, 2016, Journal of Materials Science: Materials in Electronics.

Production of vacancy-oxygen defect in electron irradiated silicon in the presence of self-interstitial-trapping impurities

V. Voronkov, R. Falster, H. Ohyama, 2011 .

Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon

P. Pochet, A. Chroneos, C. A. Londos, 2012 .

IR Studies on the Interaction between Thermal and Radiation Defects in Silicon

I. Antonova, C. A. Londos, E. Sgourou, 2007 .

The CiCs(SiI)n Defect in Silicon from a Density Functional Theory Perspective

R. Vovk, A. Chroneos, S. Christopoulos, 2018, Materials.

Vacancy-oxygen defects in p-type Si1−xGex

A. Chroneos, C. A. Londos, E. Sgourou, 2014 .

The CiOi(SiI)2 defect in silicon: density functional theory calculations

R. Vovk, A. Chroneos, S. Christopoulos, 2017, Journal of Materials Science: Materials in Electronics.

Point defect engineering strategies to suppress A-center formation in silicon

P. Pochet, A. Chroneos, C. A. Londos, 2011 .

Impact of the germanium concentration in the stability of E-centers and A-centers in Si1−xGex

A. Chroneos, C. A. Londos, E. Sgourou, 2013, Journal of Materials Science: Materials in Electronics.

Isovalent doping and the CiOi defect in germanium

R. Vovk, A. Chroneos, S. Christopoulos, 2018, Journal of Materials Science: Materials in Electronics.

Impact of isovalent doping on the formation of the CiOi(SiI)n defects in silicon

R. Vovk, A. Chroneos, S. Christopoulos, 2017 .

Defect Process, Dopant Behaviour and Li Ion Mobility in the Li2MnO3 Cathode Material

A. Chroneos, N. Kuganathan, E. Sgourou, 2019, Energies.

Kinetics of Ions in Post-Lithium Batteries

Aspassia Daskalopulu, R. Vovk, A. Chroneos, 2023, Applied Sciences.