Hiromu Shiomi

4H-SiC MOSFETs on (03-38) Face

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2002 .

Low on-resistance and fast switching of 13-kV SiC MOSFETs with optimized junction field-effect transistor region

Kenji Fukuda, Masaki Furumai, K. Fukuda, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

GaN growth on (30&3macr;8) 4H‐SiC substrate for reduction of internal polarization

Motoaki Iwaya, Akira Honshio, Satoshi Kamiyama, 2005 .

High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure

Kazuyoshi Iida, Motoaki Iwaya, Akira Honshio, 2005 .

3300V-Class 4H SiC Implantation-Epitaxial Mosfets with Low Specific On-Resistance of 11.6mΩcm2 and High Avalanche Withstanding Capability

Kenji Fukuda, Takashi Tsuji, Hiromu Shiomi, 2016 .

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Koji Katayama, Masaya Okada, Masaki Ueno, 2010 .