H. Kobayashi

Lattice site location of ultra-shallow implanted B in Si using ion beam analysis

Fumitaka Nishiyama, H. Kobayashi, Ichiro Nomachi, 2001 .

Oxide thickness dependence of energy shifts in the Si 2p levels for the SiO2/Si structure, and its elimination by a palladium overlayer

Tomohiro Kubota, Masayoshi Nishiyama, Yoshihiro Nakato, 1998 .

Jc–B characteristics of RE–Ba–Cu–O (RE = Sm, Er and [Gd, Er]) films on PLD-CeO2/IBAD-GZO/metal substrates

Y. Shiohara, Masaya Konishi, Kazuhiro Takahashi, 2006 .

Electrical and crystallographic evaluation of SOS iimplanted with silicon and/or oxygen

Yasuhiro Yamamoto, Taroh Inada, H. Kobayashi, 1985 .

Development of long REBCO coated conductors with artificial pinning centers by using MPMT–PLD method

Takeshi Kato, Y. Shiohara, H. Kobayashi, 2008 .