Grzegorz Kozlowski

Low defect large area semi-polar (112) GaN grown on patterned (113) silicon

Pleun Maaskant, Brian Corbett, Colin J Humphreys, 2015, Physica status solidi. B, Basic solid state physics : PSS.

Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112¯2) orientation

Brian Corbett, Stefan Schulz, Grzegorz Kozlowski, 2014 .

Low threading dislocation Ge on Si by combining deposition and etching

Yuji Yamamoto, Bernd Tillack, Peter Zaumseil, 2012 .

Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation

Brian Corbett, B. Corbett, S. Schulz, 2015 .

Semipolar (11 2― 2) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates

Frank Brunner, Pleun Maaskant, Duc V. Dinh, 2015 .

High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

Thomas Schroeder, Peter Zaumseil, Giovanni Capellini, 2012 .