A. Tanaka

发表

Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Y. Kumagai, M. Boćkowski, H. Amano, 2020 .

Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE

H. Amano, S. Nitta, K. Nagamatsu, 2017 .

Demonstration of high thermal performance GaN-on-graphite composite bonded substrate for application in III-V nitride electronics

T. Suga, A. Wakejima, A. Tanaka, 2021, Applied Physics Express.

Demonstration of Observation of Dislocations in GaN by Novel Birefringence Method

H. Amano, S. Harada, T. Ujihara, 2020, physica status solidi (b).

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates

H. Amano, S. Nitta, S. Usami, 2019, Japanese Journal of Applied Physics.

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

H. Amano, Y. Sugawara, Y. Ishikawa, 2018 .

Effect of V/III ratio on the surface morphology and electrical properties of m –plane (101¯0) GaN homoepitaxial layers

H. Amano, S. Bae, S. Nitta, 2017 .

Impact of high-temperature implantation of Mg ions into GaN

H. Amano, S. Chichibu, S. Nitta, 2020, Japanese Journal of Applied Physics.

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Kevin J. Chen, H. Amano, S. Chichibu, 2020, physica status solidi (b).

Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility

N. Taoka, H. Amano, M. Shimizu, 2021, Applied Physics Express.

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing

H. Amano, R. Sugiura, A. Tanaka, 2021, Applied Physics A.

Laser slice thinning of GaN-on-GaN high electron mobility transistors

A. Wakejima, H. Amano, R. Sugiura, 2022, Scientific Reports.

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Kevin J. Chen, H. Amano, Tao Chen, 2021 .

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Kevin J. Chen, H. Amano, Tao Chen, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

H. Amano, S. Nitta, S. Usami, 2019, Applied Physics Express.

Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

H. Amano, S. Nitta, S. Usami, 2019, Japanese Journal of Applied Physics.

Experimental demonstration of GaN IMPATT diode at X-band

H. Amano, M. Arai, S. Nitta, 2021 .

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

H. Amano, Kazuo Yamamoto, T. Hirayama, 2019, Microscopy.

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

Y. Koide, A. Tanaka, Y. Honda, 2021 .

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Kevin J. Chen, H. Amano, Tao Chen, 2022, Applied Physics Letters.

Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current

H. Amano, S. Nitta, S. Usami, 2019, Applied Physics Letters.

Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer

Y. Irokawa, T. Nabatame, Kenji Watanabe, 2019, CrystEngComm.

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Atsushi Tanaka, Takashi Sekiguchi, Yoshio Honda, 2017 .

Smart-cut-like laser slicing of GaN substrate using its own nitrogen

H. Amano, R. Sugiura, A. Tanaka, 2021, Scientific Reports.

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

H. Amano, S. Nitta, A. Tanaka, 2021 .

Computational study of oxygen stability in vicinal m(10−10)-GaN growth by MOVPE

K. Shiraishi, H. Amano, Y. Kangawa, 2020, Applied Physics Express.

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

H. Amano, M. Pristovsek, S. Nitta, 2018, Japanese Journal of Applied Physics.

Precise Measurement of Carrier Concentrations in n-Type GaN by Phase-Shifting Electron Holography

H. Amano, Kazuo Yamamoto, T. Hirayama, 2019, Microscopy and Microanalysis.

Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro‐LEDs

H. Amano, Yutaka Furusawa, M. Pristovsek, 2023, Advanced Optical Materials.

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

Electronic structure analysis of core structures of threading dislocations in GaN

K. Shiraishi, H. Amano, M. Araidai, 2019, 2019 Compound Semiconductor Week (CSW).

Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth

H. Amano, M. Pristovsek, S. Nitta, 2019, Journal of Crystal Growth.

“Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration

H. Amano, S. Nitta, A. Tanaka, 2022, Applied Physics Express.

Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodes

K. Shiraishi, H. Amano, Y. Harashima, 2020, 2004.06876.

Oxygen Incorporation Kinetics in Vicinal m(10−10) Gallium Nitride Growth by Metal‐Organic Vapor Phase Epitaxy

K. Shiraishi, H. Amano, Y. Kangawa, 2020, physica status solidi (RRL) – Rapid Research Letters.

Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

H. Amano, M. Arai, A. Tanaka, 2023, IEEE Electron Device Letters.