Bingjun Li

发表

X-ray diffraction studies of GaN p-i-n structures for high power electronics

R. Goldman, Jung Han, M. Nami, 2020 .

Selective Area Regrowth Produces Nonuniform Mg Doping Profiles in Nonplanar GaN p–n Junctions

Paul J. M. Smeets, L. Lauhon, Jung Han, 2021 .

Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials

M. Boćkowski, M. Dudley, Jung Han, 2022, Materials Science Forum.

Unveiling the Influence of Selective-area-regrowth Interfaces on Local Electronic Properties of GaN p-n Junctions for Efficient Power Devices

R. Goldman, L. Lauhon, Sizhen Wang, 2022, Nano Energy.

RGB arrays for micro-LED applications using nanoporous GaN embedded with quantum dots.

C. Lin, T. Zhao, Shu Hu, 2020, ACS applied materials & interfaces.

Selective area doping of GaN toward high-power applications

R. Ferreyra, Sizhen Wang, Bingjun Li, 2023, Journal of Physics D: Applied Physics.

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

E. Yu, A. Allerman, David J. Smith, 2021, Materials Today.

Etched-And-Regrown GaN P-N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching.

Jung Han, M. Nami, A. Armstrong, 2021, ACS applied materials & interfaces.

A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)

Jung Han, M. Nami, Sizhen Wang, 2020, Journal of Crystal Growth.

In situ and selective area etching of GaN by tertiarybutylchloride (TBCl)

Jung Han, M. Nami, Sizhen Wang, 2019, Applied Physics Letters.

Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector

Rami T. Elafandy, Tae Kyoung Kim, J. Kwak, 2020 .