K. Cheng

发表

Recent Advances in GaN‐Based Power HEMT Devices

Y. Chai, Hongyu Yu, W. Cheng, 2021, Advanced Electronic Materials.

Investigation of AlN nucleation layers for AlGaN/GaN heterostructures on 4H-SiC

R. Belmans, G. Borghs, M. Germain, 2006 .

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

Gustaaf Borghs, Anne Lorenz, Joff Derluyn, 2007 .

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

O. Richard, H. Bender, G. Borghs, 2008 .

Radiation hardness of AlxGa1-xN photodetectors exposed to Extreme UltraViolet (EUV) light beam

Kai Cheng, Robert Mertens, Piet De Moor, 2009, Optics + Optoelectronics.

Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

G. Borghs, R. Kudrawiec, M. Baranowski, 2013 .

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

K. Lau, P. Xiang, Huaxing Jiang, 2021, IEEE Transactions on Electron Devices.

High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing.

Dunjun Chen, Rong Zhang, Youdou Zheng, 2021, Small.

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Hugo Bender, Stefaan Decoutere, Hu Liang, 2011 .

2 kV Breakdown Voltage GaN – on-Si DHFETs with Submicron Thin AlGaN Buffer

S. Decoutere, M. V. Hove, R. Mertens, 2011 .

Effect of V/III ratio in AlN and AlGaN MOVPE

K. Mazaev, M. Leys, S. Degroote, 2006 .

AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE

G. Borghs, M. Germain, M. Leys, 2008 .

Growth and characterization of unintentionally doped GaN grown on silicon(1 1 1) substrates

Gustaaf Borghs, Phil Dawson, Joff Derluyn, 2008 .

Growth of GaN on Ge(111) by molecular beam epitaxy

M. Kuijk, G. Borghs, M. Leys, 2006 .

Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures

G. Borghs, M. Leys, R. Lieten, 2012 .

Growth of RuO2 nanorods in reactive sputtering

J. Gan, Chang-Po Hsiung, K. Cheng, 2006 .

GaN‐on‐Si HEMT stress under high electric field condition

Denis Marcon, Robert Mertens, Gustaaf Borghs, 2009 .

Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer

Gustaaf Borghs, Wouter Ruythooren, J. Das, 2005 .

Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy

G. Borghs, Liping Zhang, M. Germain, 2010 .

Mg doping of GaN by molecular beam epitaxy

L. Zhang, G. Borghs, V. Motsnyi, 2011 .

High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Gustaaf Borghs, Marianne Germain, Stefan Degroote, 2008 .

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Gustaaf Borghs, G. Van Tendeloo, Joff Derluyn, 2006 .

Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation

H. Bender, G. Borghs, P. Favia, 2012 .

Multi-channel nanowire devices for efficient power conversion

E. Matioli, V. Tileli, C. Erine, 2021, Nature Electronics.

Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si

Dunjun Chen, P. Han, Rong Zhang, 2020 .

Realization of regular resonance mode in GaN-based polygonal microdisks on Si

Dunjun Chen, P. Han, Rong Zhang, 2020 .

High-efficiency photon–electron coupling resonant emission in GaN-based microdisks on Si

Dunjun Chen, P. Han, Rong Zhang, 2020 .

In situ epitaxial growth of TiO2 on RuO2 nanorods with reactive sputtering

J. Gan, J. Yeh, L. Chou, 2006 .

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

E. Matioli, R. van Erp, H. Yildirim, 2020 .

Effect of Te doping on oxidation resistance and electronic structure of two-dimensional InSe

Rui-Xia Miao, K. Cheng, Xiao-feng Yang, 2023, Acta Physica Sinica.

Strain relaxation in GaN nanopillars

G. Borghs, Mario Gonzalez, Sijia Jiang, 2012 .

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Gustaaf Borghs, Marleen Van Hove, Joff Derluyn, 2009 .

Excellent Stability of GaN-on-Si High Electron Mobility Transistors with 5 µm Gate–Drain Spacing Tested in Off-State at a Record Drain Voltage of 200 V and 200 °C

Denis Marcon, Robert Mertens, Gustaaf Borghs, 2010 .