Y. Ando

发表

m‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle m‐Plane GaN Substrates

H. Amano, A. Tanaka, S. Nitta, 2018 .

Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE

H. Amano, S. Nitta, K. Nagamatsu, 2017 .

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates

H. Amano, S. Nitta, S. Usami, 2019, Japanese Journal of Applied Physics.

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

H. Amano, Y. Sugawara, Y. Ishikawa, 2018 .

Impact of high-temperature implantation of Mg ions into GaN

H. Amano, S. Chichibu, S. Nitta, 2020, Japanese Journal of Applied Physics.

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Kevin J. Chen, H. Amano, S. Chichibu, 2020, physica status solidi (b).

Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility

N. Taoka, H. Amano, M. Shimizu, 2021, Applied Physics Express.

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

Laser slice thinning of GaN-on-GaN high electron mobility transistors

A. Wakejima, H. Amano, R. Sugiura, 2022, Scientific Reports.

Vertical GaN-on-GaN nanowire Schottky barrier diodes by top-down fabrication approach

Kevin J. Chen, H. Amano, Tao Chen, 2021 .

Dielectric Ruduced Surface Field Effect on Vertical GaN-on-GaN Nanowire Schottky Barrier Diodes

Kevin J. Chen, H. Amano, Tao Chen, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

H. Amano, S. Nitta, S. Usami, 2019, Applied Physics Express.

Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

H. Amano, S. Nitta, S. Usami, 2019, Japanese Journal of Applied Physics.

Experimental demonstration of GaN IMPATT diode at X-band

H. Amano, M. Arai, S. Nitta, 2021 .

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms.

H. Amano, Kazuo Yamamoto, T. Hirayama, 2019, Microscopy.

Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg

H. Amano, S. Nitta, Y. Honda, 2021, Applied Physics Letters.

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

Y. Koide, A. Tanaka, Y. Honda, 2021 .

Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Kevin J. Chen, H. Amano, Tao Chen, 2022, Applied Physics Letters.

Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE

H. Amano, M. Pristovsek, S. Nitta, 2019, Journal of Crystal Growth.

Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness

R. Dupuis, F. Ponce, A. Fischer, 2023, Journal of Crystal Growth.

Etching-induced damage in heavily Mg-doped p-type GaN and its suppression by low-bias-power inductively coupled plasma-reactive ion etching

H. Amano, S. Nitta, A. Tanaka, 2021 .

Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

H. Amano, M. Pristovsek, S. Nitta, 2018, Japanese Journal of Applied Physics.

Precise Measurement of Carrier Concentrations in n-Type GaN by Phase-Shifting Electron Holography

H. Amano, Kazuo Yamamoto, T. Hirayama, 2019, Microscopy and Microanalysis.

The effect of dry etching condition on the performance of blue micro light-emitting diodes with reduced quantum confined Stark effect epitaxial layer

T. Seong, H. Amano, Yutaka Furusawa, 2022, Journal of Applied Physics.

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

N. Taoka, H. Amano, S. Nitta, 2020 .

“Regrowth-free” fabrication of high-current-gain AlGaN/GaN heterojunction bipolar transistor with N-p-n configuration

H. Amano, S. Nitta, A. Tanaka, 2022, Applied Physics Express.

Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz

H. Amano, M. Arai, A. Tanaka, 2023, IEEE Electron Device Letters.

Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate

S. Nitta, Y. Honda, Y. Ando, 2023, Journal of Crystal Growth.

Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes

T. Detchprohm, Y. Ando, Zhiyu Xu, 2023, Applied Physics Letters.