M. B. Salem

发表

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

C. Gaquière, H. Maaref, S. Saadaoui, 2011 .

Addition of nanometer Al2O3 during the final processing of (Bi, Pb)-2223 superconductors

M. B. Salem, M. Annabi, A. M’chirgui, 2004 .

Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode

C. Gaquière, H. Maaref, S. Saadaoui, 2011 .

Corrosion of bismuth-based superconductor wires by some atmospheric agents

M. B. Salem, A. M’chirgui, F. B. Azzouz, 2000 .

The study on the ZnO and Zn0.95Mn0.05O added YBCO system: Investigation of microstructure and transport properties

M. B. Salem, M. Annabi, F. B. Azzouz, 2010 .

Twinning of the hexagonal (A) structure of rare earth sesquioxides

M. B. Salem, B. Yangui, C. Boulesteix, 1985 .

I–V anomalies on InAlAs/InGaAs/InP HFETs and deep levels investigations

G. Guillot, N. Sghaier, A. Kalboussi, 2005 .

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

C. Gaquière, H. Maaref, S. Saadaoui, 2012 .