P. Norris

发表

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates

S. Zemon, B. Elman, C. Jagannath, 1987 .

Photoluminescence Study of GaAs/AlGaAs Quantum Wells Grown On Si Substrates

S. Zemon, B. Elman, C. Jagannath, 1987 .

Effects of composition on microstructure and superconducting properties of YBa2Cu3O7−x thin films prepared by plasma enhanced metalorganic chemical vapor deposition

B. Kear, B. Gallois, F. Cosandey, 1992 .

Oxidizer partial pressure window for YBa2Cu3O7−x thin film formation by metalorganic chemical vapor deposition

B. Kear, B. Gallois, S. M. Garrison, 1992 .

Effects of composition on the microstructure of YBa_2Cu_3O_7−x thin films prepared by plasma-enhanced metalorganic chemical vapor deposition

B. Kear, B. Gallois, F. Cosandey, 1992 .

Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices

S. Pearton, A. Osinsky, P. Chow, 2001 .

Demonstration of efficient p-type doping in Al/sub x/Ga/sub 1-x/N/GaN superlattice structures

A. Osinsky, E. Schubert, P. Norris, 1999 .

Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si

S. Zemon, G. Lambert, C. Jagannath, 1986 .

Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si

S. Zemon, G. Lambert, C. Jagannath, 1986 .

Experimental and theoretical study of acceptor activation and transport properties in p-type Al xGa 1 À xN Õ GaN superlattices

A. Osinsky, N. Faleev, E. Schubert, 2000 .

Electronic states in modulation doped p-AlGaN/GaN superlattices

Andrei Osinsky, Stephen J. Pearton, Peter P. Chow, 2001 .

Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering

V. A. Dravin, S. Pearton, A. Osinsky, 2002 .

Reactions of phosphorus atoms, P(34S), studied by attenuation of atomic resonance radiation in the vacuum ultraviolet

D. Husain, P. Norris, 1977 .

Kinetic study of electronically excited silicon atoms, Si(3p2(1S0)), by time-resolved attenuation of atomic resonance radiation

D. Husain, P. Norris, 1977 .

Magnetophotoluminescence in high purity MOVPE GaAs

S. Zemon, G. Lambert, P. Norris, 1986 .

Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy

S. Zemon, G. Lambert, E. Koteles, 1986 .

Reduced pressure MOVPE growth and characterization of GaAs/GaAlAs heterostructures using a triethylgallium source

J. Black, S. Zemon, G. Lambert, 1984 .

In-situ OMVPE process sensing of GaAs and AlGaAs by photoreflectance

H. Shen, F. Pollak, P. Norris, 1990 .

Epitaxial thin films of YBa2Cu3O7−x on LaAlO3 substrates deposited by plasma‐enhanced metalorganic chemical vapor deposition

B. Kear, B. Gallois, J. Zhao, 1991 .

Determination of critical current density and transition temperature of YBa2 Cu3 O7−x thin films by measurement of ac susceptibility

B. Gallois, G. Tompa, P. Zawadzki, 1990 .

Metal organic chemical vapor deposition of superconducting YBa2Cu3O7-x thin films

B. Kear, B. Gallois, G. Tompa, 1990 .

Metalorganic chemical vapor deposition of superconducting YBa2Cu3O7−x in a high‐speed rotating disk reactor

B. Kear, B. Gallois, G. Tompa, 1989 .

Effects of Y2O3 precipitates on critical current anisotropy in YBa2Cu3O7−x thin films prepared by plasma‐enhanced metalorganic vapor deposition

B. Kear, B. Gallois, F. Cosandey, 1992 .

High density, ultrafine precipitates in YBa2Cu3O7−x thin films prepared by plasma‐enhanced metalorganic chemical vapor deposition

B. Kear, P. Lu, B. Gallois, 1992 .

Low-pressure Metalorganic Chemical Vapor Deposition and Characterization of YBa 2 Cu 3 O 7−x Thin Films

B. Kear, B. Gallois, G. Tompa, 1990 .

Fabrication of high-quality YBaCuO thin films by plasma-enhanced metal-organic chemical vapor deposition

J. Zhao, P. Norris, 1991 .

High‐quality YBa2Cu3O7−x thin films by plasma‐enhanced metalorganic chemical vapor deposition at low temperature

B. Kear, X. Wu, B. Gallois, 1991 .

Compositional effects on plasma‐enhanced metalorganic chemical vapor deposition of YBa2Cu3O7−x thin films

B. Kear, X. Wu, B. Gallois, 1991 .

Large critical current densities in YBa2Cu3O7-x thin films formed by plasma-enhanced metalorganic chemical vapor deposition at reduced temperature

B. Kear, B. Gallois, F. Cosandey, 1991 .

High critical current densities in YBa2Cu3O7−x thin films formed by metalorganic chemical vapor deposition at 730 °C

B. Kear, B. Gallois, F. Cosandey, 1991 .

Low Temperature In-Situ Growth of YBCO High Tc Superconducting Thin Films Using MOCVD and Plasma-Enhanced MOCVD (PE-MOCVD)

B. Kear, B. Gallois, F. Cosandey, 1991 .

Growth of Cubic SiC Thin Films on Silicon from Single Source Precursors by Supersonic Jet Epitaxy

S. Ustin, C. Sung, J. Boo, 1996 .

Epitaxial growth of BaTiO3 thin films by plasma‐enhanced metalorganic chemical vapor deposition

B. Wilkens, C. Maggiore, B. Kear, 1992 .

In-situ growth of YBCO high-Tc superconducting thin films by plasma-enhanced metalorganic chemical vapor deposition

B. Kear, B. Gallois, J. Zhao, 1991 .

Superconducting YBa2Cu3O7-x thin films on silver substrates by in situ plasma-enhanced metalorganic chemical vapor deposition

B. Wessels, B. Kear, B. Gallois, 1991 .

Effects of substrate temperature on growth orientation and superconducting properties of YBa2Cu3O7−x films prepared by metalorganic chemical vapor deposition

B. Kear, B. Gallois, J. Zhao, 1992 .

In‐situ growth of yba 2 cu 3 o 7‐x films by metal organic chemical vapor deposition using vertical, high‐speed rotating disk reactor.

B. Gallois, G. Tompa, P. Zawadzki, 1989 .

Kinetic study of reactions of ground state silicon atoms, Si[3p2(3PJ)], by atomic absorption spectroscopy

D. Husain, P. Norris, 1978 .

Kinetic study of ground state silicon atoms, Si[3p2(3PJ)], by atomic absorption spectroscopy

D. Husain, P. Norris, 1978 .

Kinetic study of electronically excited carbon atoms C(21S0)

D. Husain, P. Norris, 1979 .

Collisional behaviour of electronically excited silicon atoms, Si(3p2(D1D2)), by atomic absorption spectroscopy

D. Husain, P. Norris, 1978 .

A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

Gary S. Tompa, Richard A. Stall, P. Zawadzki, 1988 .

Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN

S. Pearton, Y. Park, N. Theodoropoulou, 2002 .

Multi-wafer growth of highly uniform InGaP/GaAs by low pressure MOVPE

D. Walker, R. Stall, P. Norris, 1992 .

Epitaxial electro-optical BaTiO3 films by single-sourcemetal–organic chemical vapour deposition

Feiling Wang, J. Zhao, P. Norris, 1997 .

Preparation of Epitaxial BaTiO 3 Thin Films by Plasma-Enhanced Metalorganic Chemical Vapor Deposition (Pe-Mocvd)

B. Wilkens, C. Maggiore, B. Kear, 1991 .

Electro-optic effect in Ba1−xPbxTiO3 films

Feiling Wang, J. Zhao, P. Norris, 2000 .

Growth of ferroelectric oxide films on n-GaN/c-sapphire structures

Andrei Osinsky, Vladimir Fuflyigin, Feiling Wang, 2000 .

Pyroelectric properties of AlN

Andrei Osinsky, Vladimir Fuflyigin, Peter E. Norris, 2000 .

Low‐temperature in situ formation of Y‐Ba‐Cu‐O high Tc superconducting thin films by plasma‐enhanced metalorganic chemical vapor deposition

B. Kear, B. Gallois, J. Zhao, 1990 .

Microwave resonators from YBa2Cu3O7−δ thin films made by plasma‐enhanced metalorganic chemical vapor deposition

G. V. Negrete, K. Young, J. Zhao, 1992 .

Preparation of Tl2Ba2CaCu2O8 superconducting thin films on LaAlO3 substrates from metalorganic‐chemical‐vapor‐deposition‐prepared precursor films

B. T. Collins, J. Matey, J. Zhao, 1991 .

In situ growth of YBa2Cu3O7−x high Tc superconducting thin films directly on sapphire by plasma‐enhanced metalorganic chemical vapor deposition

B. Kear, B. Gallois, J. Zhao, 1990 .

Low Temperature Fabrication Of YBa 2 Cu 3 O 7−x High-Tc Superconducting Thin Films By Plasma-Enhanced Metalorganic Chemical Vapor Deposition

B. Kear, B. Gallois, J. Zhao, 1990 .

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes

F. Ren, S. Pearton, R. Mehandru, 2001 .

Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN2

L. Bouthillette, P. Norris, P. Yip, 1999 .

Stress variations due to microcracks in GaAs grown on Si

B. G. Yacobi, S. Zemon, C. Jagannath, 1987 .

Electronic Bandgap and Refractive Index Dispersion of Single Crystalline Epitaxial ZnGeN 2

L. Bouthillette, P. Norris, L. Zhu, 1999 .

Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices

A. Osinsky, N. Faleev, E. Schubert, 2000 .

Growth of InGaAsP films in a Multi-Wafer high Speed Rotating Disk Reactor by Mocvd

R. Stall, P. Norris, M. Mckee, 1989 .

GaAs atomic-layer epitaxy in a rotating disc reactor

Heng Liu, P. Zawadzki, Peter E. Norris, 1992, Other Conferences.

Atomie Layer Epitaxy ia a Rotating Disk Reactor

H. Liu, P. Zawadzki, P. Norris, 1991 .

Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

MOCVD growth of GaN films on lattice-matched oxide substrates

D. Kisker, H. Chai, H. Maruska, 1996 .

Investigation Of Nucleation And Initial Stage Of Gan Growth By Atomic Force Microscopy And X-Ray Diffraction

A. Drehman, S.-Q. Wang, P. Norris, 1997 .

Kinetic study of ground state phosphorus atoms, P(34S), by atomic absorption spectroscopy in the vacuum ultraviolet

D. Husain, P. Norris, 1977 .

CMOS Hardening Techniques

P. E. Norris, K. Schlesier, P. Norris, 1972 .