D. Thomson

发表

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Carl-Mikael Zetterling, Robert F. Davis, Mikael Östling, 2002 .

Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN

R. Davis, D. Thomson, I. Usov, 2002 .

Reverse-annealing phenomenon during the high-temperature implantation of Ar+ into GaN

R. Davis, D. Thomson, I. Usov, 2001 .

Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

Scott A. Smith, T. Gehrke, R. Davis, 1998 .

Characterization of Be-Implanted GaN Annealed at High Temperatures

T. Gehrke, R. Davis, K. Linthicum, 1999 .

Characterization of Be-Implanted GaN Annealed at High Temperatures

T. Gehrke, R. Davis, K. Linthicum, 1998 .

Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition

J. Boeckl, D. Look, G. Jessen, 2017 .

Defects in highly conductive ZnO for transparent electrodes and plasmonics

D. Look, K. Leedy, D. Thomson, 2014 .

In situ chemical sensing in AlGaN∕GaN metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control

G. Rubloff, M. Aumer, D. Partlow, 2005 .

Realization of InAlN/GaN Unstrained HEMTs on SiC Substrates with a 75 Å Barrier Layer J. K. Gillespie, G. H. Jessen, G. D. Via, A. Crespo, and D. Langley Sensors Directorate, Air Force Research Laboratory Wright-Patterson Air Force Base, OH 45433

H. G. Henry, M. Aumer, D. Partlow, 2007 .

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

Robert F. Davis, Darren B. Thomson, Pradeep Rajagopal, 1999 .

Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates

R. Davis, D. Thomson, Yu-Ru Li, 2007 .

Validating gallium nitride growth kinetics using a precursor delivery showerhead as a novel chemical reactor

G. Rubloff, R. Adomaitis, M. Aumer, 2006 .

Pendeo-epitaxial growth of GaN on SiC and silicon substrates via metalorganic chemical vapor deposition

M. Mehregany, C. Zorman, T. Gehrke, 1999 .

GROWTH, DOPING AND CHARACTERIZATION OF EPITAXIAL THIN FILMS AND PATTERNED STRUCTURES OF ALN, GAN, AND ALXGA1-XN

T. Gehrke, R. Davis, T. Zheleva, 1999 .

Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques

M. Mehregany, C. Zorman, T. Gehrke, 1998 .

Growth and Characterization of GaN and AL x GA 1−x N Thin Films Achieved Via Lateral- and/or Pendeo-Epitaxial Overgrowth on 6H-SIC(0001) Substrates

T. Gehrke, R. Davis, K. Linthicum, 1998 .

Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry

Scott A. Smith, R. Davis, P. Rajagopal, 2000 .

Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy

T. Gehrke, R. Davis, K. Linthicum, 1998 .

In situ cleaning of GaN/6H-SiC substrates in NH3

R. Davis, H. Lamb, D. Thomson, 2001 .

Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

T. Gehrke, R. Davis, K. Linthicum, 1998 .

High temperature nucleation and growth of GaN crystals from the vapor phase

R. Davis, H. Shin, R. Schlesser, 2002 .

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

R. Davis, H. Shin, E. Arkun, 2002 .

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

R. Doak, R. Davis, E. Bauer, 1999 .

Effects of Incomplete Ionization on Beta - Ga2O3 Power Devices: Unintentional Donor with Energy 110 meV

A. Neal, G. Jessen, K. Chabak, 2017, 1706.09960.

(SiC)x(AlN)1-x Solid-Solution Substrate for High Temperature and High Power Devices

D. Kahler, D. Knuteson, A. Berghmans, 2010 .

PVT Growth at High Temperatures

D. Kahler, D. Knuteson, A. Berghmans, 2006 .

PVT Growth at High Temperature: Wide Bandgap Semiconductors

D. Kahler, D. Knuteson, A. Berghmans, 2006 .

Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al2O3 (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C

S. Denbaars, E. Kim, F. Lange, 2007 .

Pendeoepitaxy of gallium nitride thin films

Robert F. Davis, Darren B. Thomson, Dale Batchelor, 1999 .

Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams

R. Davis, H. Lamb, D. Thomson, 2001 .

Dose and implantation temperature influence on disorder produced by Ar+ ion implantation into GaN

R. Davis, Y. Kudriavtsev, R. Asomoza, 2002, Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.

Growth and characteristics of AlGaN/GaN heterostructures on sp^2-bonded BN by metal–organic chemical vapor deposition

David C. Look, Michael Snure, Darren B. Thomson, 2016 .

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control

G. Rubloff, R. Adomaitis, M. Aumer, 2005 .

RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

A. Crespo, H. G. Henry, D. Langley, 2007, IEEE Electron Device Letters.

Donors and deep acceptors in β-Ga2O3

James S. Speck, Hongping Zhao, Shin Mou, 2018, Applied Physics Letters.

Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

A. Neal, G. Jessen, K. Chabak, 2017, Scientific Reports.

Real-time material quality prediction, fault detection, and contamination control in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

G. Rubloff, M. Aumer, D. Partlow, 2005 .

Optical activation of Be implanted into GaN

R. Davis, C. Ronning, D. Thomson, 1998 .

Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped β-Ga2O3 films by pulsed laser deposition

Cynthia T. Bowers, D. Look, G. Jessen, 2018, APL Materials.

Long-wavelength infrared surface plasmons on Ga-doped ZnO films excited via 2D hole arrays for extraordinary optical transmission

David C. Look, Kevin D. Leedy, Justin W. Cleary, 2013, Optics & Photonics - NanoScience + Engineering.

Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior

R. Davis, E. Kamińska, A. Piotrowska, 1998 .

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

R. Davis, H. Lamb, E. Preble, 2003 .

Organometallic Vapor Phase Lateral Epitaxy of Low Defect Density GaN Layers

R. Davis, T. Zheleva, O. Nam, 1997 .

Homoepitaxial GaN Layers Studied by Low‐Energy Electron Microscopy, Atomic Force Microscopy and Transmission Electron Microscopy

R. Doak, David J. Smith, R. Davis, 1999 .