J. Nakata

发表

Electrical properties and conduction mechanisms of heavily B+-ion-implanted type IIa diamond: effects of temperatures during the ion implantation and postannealing upon electrical conduction

Y. Hoshino, Yuhei Seki, J. Nakata, 2020, Japanese Journal of Applied Physics.

Remarkable p-type activation of heavily doped diamond accomplished by boron ion implantation at room temperature and subsequent annealing at relatively low temperatures of 1150 and 1300 °C

Y. Hoshino, Yuhei Seki, J. Nakata, 2019, Applied Physics Letters.

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

Y. Hoshino, J. Nakata, G. Yachida, 2016 .

A novel mechanism of ultrathin SOI synthesis by extremely low-energy hot O+ implantation

Y. Hoshino, J. Nakata, G. Yachida, 2016 .

Enhanced crystallization of amorphous Si containing hydrogen without oxygen during ion-beam irradiation at 310 °C and during furnace annealing below 450 °C

J. Nakata, 1997 .

Lattice location of Er in GaAs determined from Monte Carlo simulation of ion channeling spectra

Y. Kido, E. Nakai, J. Nakata, 1994 .

Structural analysis of erbium sheet‐doped GaAs grown by molecular‐beam epitaxy, with ion channeling followed by Monte Carlo simulation

Y. Kido, N. Jourdan, Y. Yamamoto, 1995 .

Atomic configuration of the Er‐O luminescence center in Er‐doped GaAs with oxygen codoping

Y. Horikoshi, A. Taguchi, J. Nakata, 1994 .

Direct evidence of Er atoms occupying an interstitial site in metalorganic chemical vapor deposition-grown GaAs:Er

J. Nakata, K. Takahei, M. Taniguchi, 1992 .

Characterization of Hot-Implanted Fe near the SiO2/Si Interface

Y. Hoshino, J. Nakata, Hiroki Arima, 2011 .

The RBS analysis for a thin amorphous Si layer formed on clean and H-terminated Si(0 0 1) surfaces followed by medium-energy IBIEC treatments

Y. Hoshino, J. Nakata, G. Yachida, 2019, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Tetragonal WSi2 formation by 0.5–5 MeV Xe-ion-beam irradiation at 250 °C and 450 °C

Toru Yamaguchi, J. Nakata, 1997 .

Epitaxial crystallization during 600 °C furnace annealing of amorphous Si layer deposited by low-pressure chemical-vapor-deposition and irradiated with 1-MeV Xe ions

J. Nakata, 1997 .

Novel low‐temperature recrystallization of amorphous silicon by high‐energy ion beam

J. Nakata, K. Kajiyama, Kenji Kajiyama, 1982 .

Epitaxial growth of a deposited amorphous Si layer formed on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization combined with ion beam mixing

Y. Hoshino, J. Nakata, G. Yachida, 2019, Japanese Journal of Applied Physics.

Reply to ‘‘Comment on ‘Evidence of enhanced epitaxial crystallization at low temperature by inelastic electronic scattering of mega‐electron‐volt heavy‐ion‐beam irradiation’ ’’ [J. Appl. Phys. 80, 4235 (1996)]

J. Nakata, 1996 .

EVIDENCE OF ENHANCED EPITAXIAL CRYSTALLIZATION AT LOW TEMPERATURE BY INELASTIC ELECTRONIC SCATTERING OF MEGA-ELECTRON-VOLT HEAVY-ION-BEAM IRRADIATION

J. Nakata, 1996 .

Suppression of AlSb oxidation with hydrocarbon passivation layer induced by MeV‐He+ irradiation

Y. Nanishi, T. Shibata, J. Nakata, 1994 .

In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As+ Ion Implantation

Mitsutoshi Takahashi, J. Nakata, K. Kajiyama, 1981 .

In-situ ion-beam annealing of damage in GaAs during O implantation and O-site determination by 18O(p,α) 15N nuclear reaction

Y. Kido, J. Nakata, Yasukazu Yamamoto, 1997 .

Extremely high-efficient activation of acceptor boron introduced by ion implantation at room temperature with various doping concentrations in epitaxially synthesized diamond films by chemical vapor deposition

Y. Hoshino, Yuhei Seki, J. Nakata, 2021 .

Depth profiling of interfacial fluctuation with nanometer order in ultrathin silicon-on-insulator structure by classical Rutherford backscattering using 10B ions

Y. Hoshino, J. Nakata, T. Toyohara, 2019, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Precise Profiles for Arsenic Implanted in Si and SiO2 over a Wide Implantation Energy Range (10 keV–2.56 MeV)

J. Nakata, K. Kajiyama, 1982 .

Growth of single-walled carbon nanotubes from hot-implantation-formed catalytic Fe nanoparticles assisted by microwave plasma

Y. Hoshino, J. Nakata, Hiroki Arima, 2012 .

Impact excitation of Er-doped GaAs and the rare-earth sites in III-V compound semiconductors

S. Chang, Y. Su, J. Nakata, 1993 .

Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process

Y. Hoshino, M. Kasu, T. Oishi, 2021 .

Formation of SiC Nanocrystals Aligned at the SiO2/Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy

Y. Hoshino, J. Nakata, Y. Soga, 2020 .

Silicide Synthesis by Fe+ Implantation in Si Substrates

Y. Hoshino, J. Nakata, G. Yachida, 2015 .

Carbon nanotube growth from catalytic nano-clusters formed by hot-ion-implantation into the SiO2/Si interface

Y. Hoshino, J. Nakata, Hiroki Arima, 2012 .

Interdiffusion Analysis of Au/Ti and Au/Pt/Ti Electrode Structures Grown on Diamond (001) Surface by Rutherford Backscattering Spectroscopy

Y. Hoshino, J. Nakata, Yasunao Saito, 2010 .

Arsenic pileup at the SiO2/Si interface

Yoshiyuki Sato, K. Imai, J. Nakata, 1995 .

The anomalous refractive index in the ellipsometric evaluation of an inhomogeneous film

J. Nakata, K. Kajiyama, 1981 .