T. Kugimiya

发表

Photoelectron emission yield experiments on evolution of sub-gap states in amorphous In-Ga-Zn-O thin films with post deposition hydrogen treatment

K. Hayashi, H. Goto, A. Hino, 2015 .

Electron traps in amorphous In–Ga–Zn–O thin films studied by isothermal capacitance transient spectroscopy

K. Hayashi, S. Yasuno, H. Okada, 2012 .

Effect of H and OH desorption and diffusion on electronic structure in amorphous In-Ga-Zn-O metal-oxide-semiconductor diodes with various gate insulators

K. Hayashi, S. Yasuno, A. Hino, 2012 .

Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method

S. Yasuno, T. Kugimiya, S. Morita, 2011 .

A method for shortening effective channel length in oxide TFT by partial formation of conductive region

H. Tsuji, M. Nakata, M. Miyakawa, 2019, Japanese Journal of Applied Physics.

Improvement of Stress Stability in Back Channel Etch-Type Amorphous In-Ga-Zn-O Thin Film Transistors with Post Process Annealing

K. Hayashi, H. Goto, A. Hino, 2017 .

Low driving voltage indium–tin oxide/Al–Ni–Cu–La anode electrodes for top-emission organic light-emitting diodes

T. Kugimiya, Kohei Nishiyama, H. Okuno, 2017 .

P‐149: Anode Electrode of Al‐Ni Alloy Film Directly in Contact with ITO for Top‐Emitting OLEDs

H. Goto, Mototaka Ochi, T. Kugimiya, 2009 .

Evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O analyzed by photoelectron emission yield experiments

H. Goto, A. Hino, Hiroaki Tao, 2015, 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).

Current Path Analysis of the Direct Contact Between ITO and Al–Ni Alloy Films

H. Goto, T. Kugimiya, N. Kawakami, 2009 .

Study of adhesion and chemical bonds in the reaction layer formed at Cu-Mn interconnection/SiO2 interface

A. Hino, T. Kugimiya, H. Okuno, 2013 .

Development of Iron-Based Rechargeable Batteries with Sintered Porous Iron Electrodes

K. Hayashi, A. Matsuda, G. Kawamura, 2017 .

Preparation of hydroxide ion conductive KOH-ZrO2 electrolyte for all-solid state iron/air secondary battery☆

A. Matsuda, H. Sakamoto, H. Muto, 2014 .

Ultraviolet Irradiation on Hydrogenated Amorphous Carbon Films Deposited by Atmospheric Dielectric Barrier Discharge

H. Takamatsu, T. Kugimiya, A. Nakaue, 2006 .

Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers

H. Goto, T. Kugimiya, H. Okuno, 2010 .

60.4: Single Layer Al‐Ni Interconnections for TFT‐LCDs using Direct Contacts with ITO and a‐Si

Toshihiro Kugimiya, Yoichiro Yoneda, Kazuo Yoshikawa, 2007 .

Application of Microwave Photoconductivity Decay Method to Characterization of Amorphous In-Ga-Zn-O Films

Shinya Morita, Satoshi Yasuno, Takashi Kita, 2012, IEICE Trans. Electron..

Transient photoconductivity responses in amorphous In-Ga-Zn-O films

K. Hayashi, T. Kita, S. Yasuno, 2012 .

P-1: Fabrication of a Short-Channel Oxide TFT Utilizing the Resistance-Reduction Phenomenon in In-Ga-Sn-O

H. Tsuji, M. Nakata, M. Miyakawa, 2017 .

Effects of thermal annealing on variations of electron traps in the channel region of amorphous In-Ga-Zn-O thin film transistor

K. Hayashi, H. Goto, A. Hino, 2014 .

Evaluation of stress stabilities in amorphous In–Ga–Zn–O thin-film transistors: Effect of passivation with Si-based resin

Y. Uraoka, K. Hayashi, H. Goto, 2018 .

57.2: Electrical Characterization of BCE‐TFTs with a‐IGZTO Oxide Semiconductor Compatible with Cu and Al interconnections

H. Goto, Hiroaki Tao, Mototaka Ochi, 2015 .

Physical Properties of Amorphous In–Ga–Zn–O Films Deposited at Different Sputtering Pressures

T. Kita, S. Yasuno, A. Hino, 2013 .

Low resistive ultra shallow junction for sub 0.1 /spl mu/m MOSFETs formed by Sb implantation

K. Shibahara, K. Shibahara, S. Miyazaki, 1996, International Electron Devices Meeting. Technical Digest.

Electrical Characterization of Zinc‐Rich Amorphous In‐Ga‐Zn‐O Thin Film Transistors

K. Hayashi, H. Goto, A. Hino, 2018, physica status solidi (a).

Correlation of trap states with negative bias thermal illumination stress stabilities in amorphous In–Ga–Zn–O thin-film transistors studied by photoinduced transient spectroscopy

K. Hayashi, H. Goto, A. Hino, 2017 .

Comparative study on light-induced negative-bias stress stabilities in amorphous In-Ga-Zn-O thin film transistors with photoinduced transient spectroscopy

H. Goto, A. Hino, Hiroaki Tao, 2016, 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).

Effects of etch stop layer deposition conditions on stress stabilities in amorphous In-Ga-Zn-O thin film transistors

H. Goto, A. Hino, Hiroaki Tao, 2014, 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).

Facilitation of the four-mask process by the double-layered Ti/Si barrier metal for oxide semiconductor TFTs

A. Hino, T. Kugimiya, S. Morita, 2012 .

Evaluation of Sub-Gap States in Amorphous In-Ga-Zn-O Thin Films Treated with Various Process Conditions

K. Hayashi, H. Goto, A. Hino, 2014 .