A. Wiedenhofer

发表

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

P. Friedrichs, D. Stephani, R. Rupp, 1997 .

Epitaxial growth of SiC in a single and a multi wafer vertical CVD system: a comparison.

D. Stephani, R. Rupp, A. Wiedenhofer, 1999 .

Reliability of metal-oxide-semicondictor capacitors on 6H-silicon carbide

P. Friedrichs, D. Stephani, H. Ryssel, 1999 .

Epitaxial growth of SiC in a vertical multi-wafer CVD system: Already suited as production process?

D. Stephani, C. Hecht, R. Rupp, 1999 .

Influence of different metallic contacts on porous silicon electroluminescence

W. Lang, F. Kozlowski, P. Steiner, 1996 .

Stability of electroluminescence and photoluminescence of porous silicon

W. Lang, F. Kozlowski, P. Steiner, 1996 .

Technology and RBS analysis of porous silicon light-emitting diodes

W. Lang, D. Kollewe, F. Kozlowski, 1997 .

Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation

Y. Makarov, R. Rupp, H. Behner, 1997 .