J. Ganem

发表

Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling

C. Radtke, I. Baumvol, I. Vickridge, 2003 .

NRA and XPS characterizations of layers formed by rapid thermal nitridation of thin SiO2 films

I. Trimaille, J. Ganem, S. Rigo, 1992 .

The contribution of stable isotopic tracing, narrow nuclear resonance depth profiling, and a simple stochastic theory of charged particle energy loss to studies of the dry thermal oxidation of SiC

I. Vickridge, J. Cantin, I. Trimaille, 2005 .

Electron paramagnetic resonance spectra of interface defects in nitric oxide treated Si/SiO2

J. Cantin, H. Bardeleben, I. Trimaille, 1999 .

XPS and NRA investigations during the fabrication of gold nanostructured functionalized screen-printed sensors for the detection of metallic pollutants

E. Dumas, I. Vickridge, A. Chaussé, 2017 .

Tracer study of pore initiation in anodic alumina formed in phosphoric acid.

M. G. Burke, G. Thompson, H. Habazaki, 2013 .

Porous Anodic Alumina Growth in Borax Electrolyte

G. Thompson, I. Vickridge, P. Skeldon, 2012 .

Zn1−xFexO films: from transparent Fe-diluted ZnO wurtzite to magnetic Zn-diluted Fe3O4 spinel

J. Perrière, E. Millon, J. Ganem, 2015 .

Thickness of the interface and composition of silicon oxide thin films: effect of wafer cleaning procedures

I. Baumvol, F. Stedile, I. Trimaille, 1996 .

Water-Rich Conditions During Titania Atomic Layer Deposition in the 100°C-300°C Temperature Window Produce Films with Tiiv Oxidation State But Large H and O Content Variations

R. Benbalagh, I. Vickridge, J. Ganem, 2022, SSRN Electronic Journal.

RBS and NRA analysis for films with high growth rate prepared by atomic layer deposition

I. Vickridge, B. Xia, J. Ganem, 2021 .

Loss of Oxygen at the Si ‐ SiO2 Interface during Dry Oxidation of Silicon

T. Åkermark, I. Trimaille, J. Ganem, 1999 .

High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances

I. Baumvol, F. Stedile, I. Trimaille, 1998 .

Diffusion of near surface defects during the thermal oxidation of silicon

I. Baumvol, P. André, F. Stedile, 1997 .

Mechanisms of Thermal Nitridation of Silicon

I. Baumvol, F. Stedile, I. Trimaille, 1995 .

IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning

I. Baumvol, F. Stedile, H. Becker, 1994 .

Limiting step involved in the thermal growth of silicon oxide films on silicon carbide.

C. Radtke, I. Baumvol, I. Vickridge, 2002, Physical review letters.

SIMS study of rapid nitridation of silicon dioxide thick films in an ammonia ambient

J. Kilner, E. Breelle, J. Ganem, 1994 .

Silicon and Silicon Carbide Oxidation

I. Trimaille, J. Ganem, 2013 .

Thermal oxidation of 6H-SiC studied by oxygen isotopic tracing and narrow nuclear resonance profiling

C. Radtke, I. Baumvol, I. Vickridge, 2004 .

Modellization of the silicon rapid thermal oxidation in the initial stages according to the silicon fragments model

I. Trimaille, J. Ganem, S. Rigo, 1993 .

Anodic film growth and silver enrichment during anodizing of an Mg-0.6 at.% Ag alloy in fluoride-containing organic electrolytes

I. Kuběna, A. Yerokhin, H. Habazaki, 2018, Electrochimica Acta.

Electrografting of diazonium-functionalized polyoxometalates: synthesis, immobilisation and electron-transfer characterisation from glassy carbon.

C. Combellas, F. Kanoufi, J. Pinson, 2013, Chemistry.

Film growth and alloy enrichment during anodizing AZ31 magnesium alloy in fluoride/glycerol electrolytes of a range of water contents

I. Kuběna, M. Šmíd, H. Habazaki, 2016 .

Growth of SiO2 on SiC by dry thermal oxidation: mechanisms

Y. Hoshino, I. Vickridge, I. Trimaille, 2007 .

Determination and benchmarking of 27Al(d,α) and 27Al(d,p) reaction cross sections for energies and angles relevant to NRA

M. Salimi, J. Ganem, O. Kakuee, 2021, Scientific Reports.

27 Al(d,alpha) and 27 Al(d,p) Nuclear Reaction Cross Sections at Ed<2MeV Measured at Three Backward Scattering Angles Related to NRA

I. Vickridge, M. Salimi, J. Ganem, 2021 .

Measurement of (p,p) elastic differential cross sections for 17O in the 0.6–2 MeV range at 165°

J. Ganem, O. Kakuee, E. Briand, 2022, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO2/Si interface by CO annealing

Y. Hoshino, A. Pongrácz, I. Vickridge, 2009 .

Isotopic Labeling Studies of Oxynitridation in Nitric Oxide (NO) of Si and SiO2

I. Baumvol, F. Stedile, I. Trimaille, 1998 .

Temperature and Pressure Dependence of the Oxygen Exchange at the SiO2−Si Interface, O2 ↔ SiO2, during Dry Thermal Oxidation of Silicon

T. Åkermark, I. Trimaille, J. Ganem, 1999 .

Harnessing Atomic Layer Deposition and Diffusion to Spatially Localize Rare-Earth Ion Emitters

P. Marcus, A. Seyeux, I. Vickridge, 2020 .

Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC

D. Tromson, I. Vickridge, E. Szilágyi, 2002 .

The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature window

I. Vickridge, B. Xia, J. Ganem, 2021 .

Isotopic tracing of oxigen during thermal growth of thin films of SiO2 on Si in dry O2

I. Trimaille, J. Ganem, 1997 .

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Olivier Renault, François Martin, L. G. Gosset, 2002 .

A study of the initial stages of the oxidation of silicon using 18O2 and RTP

Gábor Battistig, G. Battistig, Jean-Jacques Ganem, 1993 .

NRA characterization of pretreatment operations of silicon

I. Trimaille, J. Ganem, S. Rigo, 1992 .

Deuteron beam analysis of rapid thermal nitridation of silicon and thin SiO2 films

I. Trimaille, J. Ganem, S. Rigo, 1992 .

Direct measurement of molecular breakup dynamics and vicinage effect of swift proton clusters using narrow nuclear resonance profiling

I. Vickridge, I. Trimaille, J. Ganem, 2010 .

Vicinage effect for hydrogen clusters in Si3N4 and SiO2

I. Vickridge, S. Shubeita, I. Trimaille, 2012 .

18)O Tracer Study of Porous Film Growth on Aluminum in Phosphoric Acid

G. Thompson, I. Vickridge, P. Skeldon, 2010 .

Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations

Ian Vickridge, L. G. Gosset, I. Vickridge, 1999 .

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

I. Vickridge, P. Goldner, A. Ferrier, 2020, Journal of Applied Physics.

Isotopic tracing of Si during thermal growth of Si3N4 ultrathin films

I. Baumvol, L. Borucki, F. Stedile, 1996 .

High resolution low energy resonance depth profiling of18O in near surface isotopic tracing studies

I. Baumvol, F. Stedile, H. Becker, 1994 .

18O(p,α)15N isotopic tracing of germanium diffusion in SiO2/Si films

J. Ganem, G. Terwagne, E. Briand, 2021, Journal of Applied Physics.

DEFECT AND COMPOSITION ANALYSIS OF AS-DEPOSITED AND NITRIDED (100)SI / SIO2/ HF1-XSIXO2 STACKS BY ELECTRON PARAMAGNETIC RESONANCE AND ION BEAM ANALYSIS

E. Gusev, J. Cantin, H. Bardeleben, 2006 .

A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300 °C

I. Vickridge, A. Baron-Wiechec, J. Ganem, 2023, Vacuum.

Study of low-frequency charge pumping on thin stacked dielectrics

E. Vogel, J. Wortman, V. Misra, 2001 .

Oxygen isotopic tracing study of the dry thermal oxidation of 6H SiC

I. Vickridge, E. Szilágyi, G. Battistig, 2000 .

Incorporation of oxygen and nitrogen in ultrathin films of SiO2 annealed in NO

I. Baumvol, I. Trimaille, J. Ganem, 1998 .

Time dependence of the oxygen exchange O2↔SiO2 at the SiO2–Si interface during dry thermal oxidation of silicon

I. Vickridge, T. Åkermark, I. Trimaille, 1999 .

Use of 18O Labelling to Study Growth Mechanisms in Dry Oxidation of Silicon

I. Trimaille, J. Ganem, S. Rigo, 1993 .

Handling, purification and recovery of isotopically enriched water or gases for isotopic tracing experiments with ion beam analysis in electrochemistry and physics

D. Samuel, G. Battistig, I. Trimaille, 2007 .

An O18 study of the interaction between carbon monoxide and dry thermal SiO2 at 1100 °C

A. Pongrácz, I. Vickridge, G. Battistig, 2009 .

Thermal Nitridation of SiO2 Films in Ammonia: The Role of Hydrogen

Israel Jacob Rabin Baumvol, I. Baumvol, F. Stedile, 1996 .