V. Chinni

GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

P. Mondal, G. Ducournau, Y. Roelens, 2021, Superlattices and Microstructures.

Single-channel 100 Gbit/s transmission using III–V UTC-PDs for future IEEE 802.15.3d wireless links in the 300 GHz band

Emilien Peytavit, Klaus M. Engenhardt, Guillaume Ducournau, 2018 .

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy

P. Ruterana, X. Wallart, D. Troadec, 2014, Nanotechnology.

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

P. Ruterana, X. Wallart, D. Troadec, 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).

Single channel l00 Gbit/s link in the 300 GHz band

X. Wallart, G. Ducournau, E. Peytavit, 2018, 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).