P. Burtin

XPS study of a selective GaN etching process using self-limiting cyclic approach for power devices application

S. Barnola, N. Possémé, F. Le Roux, 2020 .

Low damage patterning of In0.53Ga0.47As film for its integration as n-channel in a fin metal oxide semiconductor field effect transistor architecture

Mickael Martin, E. Pargon, S. David, 2018, Journal of Vacuum Science & Technology A.

Characterization of AlGaN/GaN degradations during plasma etching for power devices

V. Delaye, N. Possémé, P. Gergaud, 2021 .