Jiejie Zhu

发表

Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Bin Hou, 2020 .

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017 .

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Y. Hao, Xiao-hua Ma, Minhan Mi, 2022, Applied Physics Letters.

Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2019, Chinese Physics B.

90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017 .

Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Investigating two-stage degradation of threshold voltage induced by off-state stress in AlGaN/GaN HEMTs

Y. Hao, Ting‐Chang Chang, Xiao-hua Ma, 2021, Semiconductor Science and Technology.

The Recessed Trapezoidal Groove Dual‐Gate AlGaN/GaN E‐Mode Transistor by Using Depletion Enhancement Effect

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018 .

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance

Y. Hao, X. Lu, Xiao-hua Ma, 2018, IEEE Electron Device Letters.

High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si $\delta$ -Doped AlGaN/GaN:C HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, IEEE Transactions on Electron Devices.

Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologies

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2017, IEEE Transactions on Electron Devices.

Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

Y. Hao, Xiao-hua Ma, Bin Hou, 2017 .

High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors

Y. Hao, M. Uren, Xiao-hua Ma, 2020 .

Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Electron Device Letters.

Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique

Y. Hao, M. Uren, Xiao-hua Ma, 2020, Semiconductor Science and Technology.

High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, Journal of Physics D: Applied Physics.

Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment

Xiao-hua Ma, Minhan Mi, K. Cheng, 2022, IEEE Electron Device Letters.

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

Xiao-hua Ma, Minhan Mi, Jingshu Guo, 2022, Science China Information Sciences.

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Jiejie Zhu, Xiaolong Cai, Yu Zhang, 2022, IEEE Access.

Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Y. Hao, Xiao-hua Ma, Bin Hou, 2017 .

Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, IEEE Transactions on Device and Materials Reliability.

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Y. Hao, Xiao-hua Ma, Bin Hou, 2020 .

Effect of Sc2O3 doping on microstructure and electrical properties of ZnO–Bi2O3-based varistors

Ruifeng Xu, Jiejie Zhu, Jianke Liu, 2023, Physica B: Condensed Matter.

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Xiao-hua Ma, Yi Hao, Minhan Mi, 2022, Applied Physics Letters.

Improvement of Electron Transport Property and on-Resistance in Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, IEEE Transactions on Electron Devices.

Comparative Study on Charge Trapping Induced ${V}_{\textsf{th}}$ Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

Xiaohua Ma, Yue Hao, Qing Zhu, 2018, IEEE Transactions on Electron Devices.

High Performance Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Diffusion-Controlled Interface Oxidation Technique

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric

Yue Hao, Wei-Wei Chen, Bin Hou, 2015, IEEE Transactions on Electron Devices.

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Transactions on Electron Devices.

Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2O3/AlN Gate-Stack

Y. Hao, Xiao-hua Ma, Bin Hou, 2017, IEEE Transactions on Electron Devices.

Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications

Xiao-hua Ma, Yi Hao, Minhan Mi, 2022, Applied Physics Letters.

Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, IEEE Transactions on Electron Devices.

Investigation of trap states in Al 2 O 3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Effect of Source Field Plate Cracks on the Electrical Performance of AlGaN/GaN HEMT Devices

Jiejie Zhu, Yu Zhang, Xiangyang Duan, 2022, Crystals.

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

Y. Hao, Hao Lu, Xiao-hua Ma, 2022, IEEE Transactions on Electron Devices.

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Journal of the Electron Devices Society.

Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique

Xiaohua Ma, Yue Hao, Wei-Wei Chen, 2013 .

Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2014 .

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Xiaohua Ma, Bin Hou, Yue Hao, 2014, Microelectron. Reliab..

Advances in separation of monochiral semiconducting carbon nanotubes and the application in electronics

Jiejie Zhu, Yimin Lei, Yanan Sun, 2023, Journal of Applied Physics.