Lixiang Chen

发表

Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Bin Hou, 2020 .

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017 .

Threshold Voltage Instability (PBTI) of GaN-Based Recessed MOS-HEMTs with Fast-IV-Sweep Method

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors

Xiao-hua Ma, Minhan Mi, Ling Yang, 2019, Japanese Journal of Applied Physics.

Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment*

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2016 .

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance

Y. Hao, X. Lu, Xiao-hua Ma, 2018, IEEE Electron Device Letters.

High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si $\delta$ -Doped AlGaN/GaN:C HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, IEEE Transactions on Electron Devices.

Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologies

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Improving the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs by narrowing down the fin length

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

Y. Hao, Xiao-hua Ma, Bin Hou, 2017 .

High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Electron Device Letters.

Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Y. Hao, Xiao-hua Ma, Bin Hou, 2017 .

Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, IEEE Transactions on Device and Materials Reliability.

Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).