Q. Zhu

发表

Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Bin Hou, 2020 .

Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2018, IEEE Transactions on Electron Devices.

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with f T/f max of 41/125 GHz

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017 .

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Y. Hao, Xiao-hua Ma, Minhan Mi, 2022, Applied Physics Letters.

An improved variable temperature model for small-signal characteristic analysis of GaN based HEMTs

Y. Hao, Xiao-hua Ma, Yang Lu, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Influence of Different Fin Configurations on Small-Signal Performance and Linearity for AlGaN/GaN Fin-HEMTs

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2019, IEEE Transactions on Electron Devices.

Threshold Voltage Instability (PBTI) of GaN-Based Recessed MOS-HEMTs with Fast-IV-Sweep Method

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

The coupling effect of chlorine-based gate recess and fin width modulation on the threshold voltage of AlGaN/GaN fin-based high electron mobility transistors

Xiao-hua Ma, Minhan Mi, Ling Yang, 2019, Japanese Journal of Applied Physics.

Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Y. Hao, Xiao-hua Ma, Peijun Ma, 2020, AIP Advances.

Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2019, Chinese Physics B.

The influence mechanism of Al2O3 layer and etching depth on 2DEG sheet density in gate-recessed Al2O3/AlGaN/GaN MOS-HEMTs

Y. Hao, Xiao-hua Ma, P. Li, 2016, 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Characterization of self-heating in GaN high electron mobility transistors using channel resistance measurement

Y. Hao, Xiao-hua Ma, Ling Yang, 2019, Japanese Journal of Applied Physics.

Accurate Measurement of Channel Temperature for AlGaN/GaN HEMTs

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2018, IEEE Transactions on Electron Devices.

Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment

Y. Hao, Xiao-hua Ma, Chong Wang, 2017 .

Analysis of DC, Channel Temperature, and RF Performance of In Situ SiN/AlGaN-Sandwich-Barrier/GaN/Al₀.₀₅GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, IEEE Transactions on Electron Devices.

Influence of the built-in electric field induced bby low power fluorine plasma implantation on the reliability of AlGaN-GaNHEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Investigating two-stage degradation of threshold voltage induced by off-state stress in AlGaN/GaN HEMTs

Y. Hao, Ting‐Chang Chang, Xiao-hua Ma, 2021, Semiconductor Science and Technology.

The Recessed Trapezoidal Groove Dual‐Gate AlGaN/GaN E‐Mode Transistor by Using Depletion Enhancement Effect

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018 .

Comparison of CF4 plasma versus Cl2 plasma dry etching for gate-recessed Normally-off GaN-based MISHEMT

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

High Channel Conductivity, Breakdown Field Strength, and Low Current Collapse in AlGaN/GaN/Si $\delta$ -Doped AlGaN/GaN:C HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, IEEE Transactions on Electron Devices.

Investigation of the nanochannel geometry modulation on self-heating in AlGaN/GaN Fin-HEMTs on Si

Y. Hao, Xiao-hua Ma, Bin Hou, 2019, Applied Physics Letters.

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2019, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields.

Threshold voltage control for AlGaN/GaN Fin-HEMTs with combined technologies

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Improving the peak value and linearity of transconductance for AlGaN/GaN Fin-HEMTs by narrowing down the fin length

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2017, IEEE Transactions on Electron Devices.

Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric

Y. Hao, Xiao-hua Ma, Bin Hou, 2017 .

High-Performance Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Combined With TiN-Based Source Contact Ledge and Two-Step Fluorine Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2018, IEEE Electron Device Letters.

Structural and thermal analysis of polycrystalline diamond thin film grown on GaN-on-SiC with an interlayer of 20 nm PECVD-SiN

K. Cheng, Xiao-hua Ma, P. Wang, 2022, Applied Physics Letters.

Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Electron Device Letters.

Analysis of Schottky Forward Current Transport Mechanisms in AlGaN /GaN HEMTs over a Wide Temperature Range

Xiao-hua Ma, Ling Yang, Q. Zhu, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique

Y. Hao, M. Uren, Xiao-hua Ma, 2020, Semiconductor Science and Technology.

Fast and Thermal Neutron Radiation Effects on GaN PIN Diodes

Y. Hao, Xiaohua Ma, Jincheng Zhang, 2017, IEEE Transactions on Nuclear Science.

High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, Journal of Physics D: Applied Physics.

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

Xiao-hua Ma, Minhan Mi, Jingshu Guo, 2022, Science China Information Sciences.

Experimental assessment of self-heating in AlGaN/GaN HEMTs for microwave application

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures

Y. Hao, Xiao-hua Ma, Bin Hou, 2017 .

Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam–Induced Current

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, IEEE Transactions on Device and Materials Reliability.

Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs

Y. Hao, Xiao-hua Ma, Bin Hou, 2020 .

The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Transactions on Electron Devices.

Reliability investigation of AlGaN/GaN HEMTs under reverse-bias stress at 77K

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Xiao-hua Ma, Yi Hao, Minhan Mi, 2022, Applied Physics Letters.

NaCl-assisted one-step growth of MoS2–WS2 in-plane heterostructures

Xiaohua Ma, Yue Hao, Qing Zhu, 2017, Nanotechnology.

Improvement of Electron Transport Property and on-Resistance in Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020, IEEE Transactions on Electron Devices.

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Xiao-hua Ma, Minhan Mi, Bin Hou, 2022, IEEE Transactions on Electron Devices.

Comparative Study on Charge Trapping Induced ${V}_{\textsf{th}}$ Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

Xiaohua Ma, Yue Hao, Qing Zhu, 2018, IEEE Transactions on Electron Devices.

High Performance Normally-Off Al2O3/AlGaN/GaN MOS-HEMTs Using Diffusion-Controlled Interface Oxidation Technique

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Y. Hao, Xiao-hua Ma, Minhan Mi, 2022, Applied Physics Letters.

Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure

Y. Hao, Xiao-hua Ma, Minhan Mi, 2017, IEEE Transactions on Electron Devices.

Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers

Shiliu Xu, Lin-An Yang, Yue Hao, 2009 .

Significant Degradation of AlGaN/GaN High-Electron Mobility Transistors With Fast and Thermal Neutron Irradiation

Y. Hao, Xiao-hua Ma, Xiaowei Zhou, 2019, IEEE Transactions on Nuclear Science.

Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2O3/AlN Gate-Stack

Y. Hao, Xiao-hua Ma, Bin Hou, 2017, IEEE Transactions on Electron Devices.

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved gm and Gain Linearity

Y. Hao, Hao Lu, Xiao-hua Ma, 2021, IEEE Transactions on Electron Devices.

Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors

Y. Hao, Xiao-hua Ma, Bin Hou, 2018, IEEE Transactions on Electron Devices.

Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

Y. Hao, Xiao-hua Ma, Minhan Mi, 2020 .

Physically Transient Memristive Synapse With Short-Term Plasticity Based on Magnesium Oxide

Y. Hao, Xiao-hua Ma, Mei Yang, 2019, IEEE Electron Device Letters.

High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications

Xiao-hua Ma, Mei Yang, Minhan Mi, 2023, IEEE Transactions on Electron Devices.

Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

Xiao-hua Ma, Minhan Mi, Bin Hou, 2017 .

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

Y. Hao, Hao Lu, Xiao-hua Ma, 2022, IEEE Transactions on Electron Devices.

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Y. Hao, Xiao-hua Ma, Minhan Mi, 2021, IEEE Journal of the Electron Devices Society.

Enhancement-Mode AlN/GaN Fin-type High Electron Mobility Transistor with Low Knee Voltage

Minhan Mi, Q. Zhu, Meng Zhang, 2022, 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP).

InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications

Xiao-hua Ma, Mei Yang, Minhan Mi, 2023, IEEE Journal of the Electron Devices Society.

Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN high electron mobility transistors for optimizing linearity at high electrical fields in the Ka band

Xiao-hua Ma, Minhan Mi, Q. Zhu, 2023, Semiconductor Science and Technology.

NaCl-assisted one-step growth of MoS2–WS2 in-plane heterostructures

Y. Hao, Xiao-hua Ma, Mei Yang, 2017, Nanotechnology.

Influence of Upper Channel Thickness on InAlN/GaN/InAlN/GaN Double Channel HEMT

Xiao-hua Ma, Q. Zhu, Ziyue Zhao, 2023, 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS).