Tuerxun Ailihumaer

发表

Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

A. Allerman, M. Boćkowski, M. Dudley, 2020 .

Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography

M. Dudley, B. Raghothamachar, Yafei Liu, 2020 .

Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production

G. Chung, M. Dudley, B. Raghothamachar, 2019 .

Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers

M. Dudley, B. Raghothamachar, Hongyu Peng, 2020, Journal of Electronic Materials.

Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

M. Dudley, K. Kisslinger, B. Raghothamachar, 2020, Journal of Electronic Materials.

Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation

M. Dudley, B. Raghothamachar, Shan-Yang Hu, 2021, ECS Transactions.

Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals

M. Dudley, B. Raghothamachar, Jianqiu Guo, 2019, Journal of Electronic Materials.

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2019, Materials Science Forum.

Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping Method

M. Dudley, B. Raghothamachar, Jianqiu Guo, 2019, Materials Science Forum.

Dislocation contrast on X-ray topographs under weak diffraction conditions

Xianrong Huang, M. Dudley, L. Assoufid, 2021, Journal of Applied Crystallography.

Microstructure Analysis of GaN Epitaxial Layers During Ion Implantation Using Synchrotron X-Ray Topography

M. Dudley, B. Raghothamachar, Shan-Yang Hu, 2021, ECS Transactions.

X-ray topography characterization of gallium nitride substrates for power device development

A. Allerman, M. Dudley, Yuji Zhao, 2020, Journal of Crystal Growth.

Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC

M. Dudley, M. Tagawa, S. Harada, 2021 .

Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals

M. Dudley, S. Harada, T. Ujihara, 2021 .

Synchrotron X-Ray Topographic Image Contrast Variation of BPDs Located at Different Depths Below the Crystal Surface in 4H-SiC

M. Dudley, M. Tagawa, S. Harada, 2021 .

Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g · b = 0 and g · b × l = 0

M. Dudley, B. Raghothamachar, Hongyu Peng, 2021 .

X-ray Topography Characterization of GaN Substrates Used for Power Electronic Devices

M. Dudley, B. Raghothamachar, Yafei Liu, 2021, Journal of Electronic Materials.

Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2020, Journal of Electronic Materials.

Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2021, Journal of Electronic Materials.

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers

G. Chung, M. Dudley, B. Raghothamachar, 2020 .

Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals

G. Chung, M. Dudley, B. Raghothamachar, 2020 .

Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer

M. Dudley, B. Raghothamachar, Yafei Liu, 2020 .