A. Chatterjee

发表

Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors

T. Sharma, A. Chatterjee, Shailesh K. Khamari, 2020 .

Role of ZrO2 Passivation Layer Thickness in the Fabrication of High‐Responsivity GaN Ultraviolet Photodetectors

T. Sharma, A. Chatterjee, Shailesh K. Khamari, 2019, physica status solidi (RRL) – Rapid Research Letters.

Role of AlN spacer layer and GaN back barrier on the optoelectronic properties of AlGaN/AlN/InGaN/GaN high electron mobility transistors

T. Sharma, A. Chatterjee, A. Bose, 2020 .

HfB2 and Hf–B–N hard coatings by chemical vapor deposition

J. Abelson, J. Gerbi, D. Y. Kim, 2006 .

Optimization of the growth of GaN epitaxial layers in an indigenously developed MOVPE system

T. Sharma, A. Chatterjee, R. Kumar, 2020 .

Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

S. M. Oak, T. Sharma, A. Chatterjee, 2015 .

Shaping single atomic junctions in ultra-thin Ag structures by electromigration

T. Heidenblut, C. Tegenkamp, H. Pfnür, 2018, Applied Physics Letters.

HfB 2 and Hf – B – N hard coatings by chemical vapor deposition

J. Abelson, Y. Yang, J. Gerbi, 2006 .

Tribological behavior of hafnium diboride thin films

A. Polycarpou, Navneet Kumar, J. Abelson, 2006 .

Nanoscratch study of hard HfB2 thin films using experimental and finite element techniques

A. Polycarpou, J. Abelson, A. Chatterjee, 2010 .

Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN

S. M. Oak, T. Sharma, A. Chatterjee, 2015 .

Yield Maps for Single and Bilayer Thin Films Under Scratch

A. Polycarpou, A. Beheshti, A. Chatterjee, 2016 .

An Accurate Measurement of Carrier Concentration in an Inhomogeneous GaN Epitaxial Layer from Hall Measurements

S. M. Oak, T. Sharma, A. Chatterjee, 2014 .

Optimization of the growth of GaN epitaxial layers in an indigenously developed MOVPE system

A. Chatterjee, T. Ganguli, T. Sharma, 2020, Sādhanā.

Nanoscratch and nanofriction behavior of hafnium diboride thin films

A. Polycarpou, Navneet Kumar, J. Abelson, 2008 .

Confirmation of the compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer

T. Sharma, A. Chatterjee, D. Jana, 2020 .

Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors

T. Sharma, A. Chatterjee, S. Porwal, 2018 .