Hongyu Guo

发表

High performance AlGaN/GaN pressure sensor with a Wheatstone bridge circuit

S. Cai, Y. Lv, Zhihong Feng, 2020 .

GaN planar Schottky barrier diode with cut-off frequency of 902 GHz

Zhihong Feng, Junlong Wang, G. Gu, 2016 .

$8\times8$ 4H-SiC Ultraviolet Avalanche Photodiode Arrays With High Uniformity

S. Cai, T. Han, Y. Lv, 2019, IEEE Electron Device Letters.

High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

S. Dun, Y. Lv, Zhihong Feng, 2015 .

Dynamic Characteristics of AlGaN/GaN Fin-MISHEMTs With Al2O3 Dielectric

S. Cai, Y. Lv, Zhihong Feng, 2018, IEEE Transactions on Electron Devices.

Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h

S. Cai, Y. Lv, Zhihong Feng, 2017, IEEE Electron Device Letters.

Fast growth of single-crystal graphene on Cu Ni substrate by surface oxygen supply

Zezhao He, S. Cai, Jianchao Guo, 2020, Diamond and Related Materials.

Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs

J. Mo, Zezhao He, Y. Lv, 2018 .

High-frequency AlGaN/GaN HFETs with f T/f max of 149/263 GHz for D-band PA applications

Y. Lv, Zhihong Feng, Hongyu Guo, 2016 .

Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure

Xiao-hua Ma, Z. Feng, T. Han, 2022, Applied Physics Letters.

10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation

T. Han, S. Dun, Y. Lv, 2023, IEEE Electron Device Letters.

High performance AlGaN/GaN HEMTs with AlN/SiNx passivation*

Guodong Gu, Li Wang, Xin Tan, 2015 .

Excellent-Performance AlGaN/GaN Fin-MOSHEMTs with Self-Aligned Al 2 O 3 Gate Dielectric

Y. Lv, Zhihong Feng, Xubo Song, 2016 .

Homoepitaxial GaN terahertz planar Schottky barrier diodes

Y. Lv, Zhihong Feng, S. Liang, 2022, Journal of Physics D: Applied Physics.