M. Nozaki

发表

Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices

Heiji Watanabe, T. Shimura, Hidetoshi Mizobata, 2020 .

Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma

A. Yoshigoe, Heiji Watanabe, T. Shimura, 2020, Japanese Journal of Applied Physics.

Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers

Heiji Watanabe, Takahiro Yamada, T. Shimura, 2017 .

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

A. Yoshigoe, Heiji Watanabe, Takahiro Yamada, 2018 .

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

A. Yoshigoe, Heiji Watanabe, Takahiro Yamada, 2018 .

Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

A. Yoshigoe, Heiji Watanabe, Takahiro Yamada, 2017 .

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Heiji Watanabe, T. Kachi, Takuma Kobayashi, 2022, Applied Physics Letters.

Design and control of interface reaction between Al-based dielectrics and AlGaN layer for hysteresis-free AlGaN/GaN MOS-HFETs

A. Yoshigoe, H. Watanabe, Y. Anda, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

Comparative study on thermal robustness of GaN and AlGaN/GaN MOS devices with thin oxide interlayers

A. Yoshigoe, Heiji Watanabe, Takahiro Yamada, 2019, Japanese Journal of Applied Physics.

Cytosine-Substituted Nitronylnitroxide Radical: A Key Component for Bio-Inspired Molecule-Based Magnetics

T. Takui, D. Shiomi, Kazunobu Sato, 2004 .

Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability

A. Yoshigoe, M. Shimizu, Heiji Watanabe, 2017 .

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

Takahiro Yamada, Satoshi Nakazawa, Tetsuzo Ueda, 2016 .

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Takahiro Yamada, Satoshi Nakazawa, Yoshiharu Anda, 2017 .

Insight into gate dielectric reliability and stability of SiO2/GaN MOS devices

Heiji Watanabe, T. Shimura, Yuhei Wada, 2020, Japanese Journal of Applied Physics.

Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator

Heiji Watanabe, Takahiro Yamada, T. Shimura, 2019, Japanese Journal of Applied Physics.

Fast switching performance by 20 A / 730 V AlGaN/GaN MIS-HFET using AlON gate insulator

H. Watanabe, T. Hashizume, Y. Anda, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway

Heiji Watanabe, T. Kachi, T. Shimura, 2021 .

Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

Heiji Watanabe, Takuma Kobayashi, T. Shimura, 2021, Japanese Journal of Applied Physics.

Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices

A. Yoshigoe, M. Shimizu, Heiji Watanabe, 2019, Japanese Journal of Applied Physics.

SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

A. Yoshigoe, Heiji Watanabe, Takahiro Yamada, 2018 .

Reduction of interface and oxide traps in SiO2/GaN MOS structures by oxygen and forming gas annealing

Heiji Watanabe, Takuma Kobayashi, T. Shimura, 2023, Applied Physics Express.