Yi Lu

发表

Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

M. Hori, M. Sekine, Naohiro Shimizu, 2018, AIP Advances.

Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature

M. Hori, M. Sekine, H. Kondo, 2012 .

Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power

M. Hori, M. Sekine, H. Amano, 2014 .

Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50 °C

M. Hori, M. Sekine, H. Kondo, 2013 .

Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching

T. Egawa, M. Hori, M. Sekine, 2012 .

Crystallization of Sb-rich Sb55Te45 alloy as an ultra-fast phase change film

Yi Lu, 2021, Journal of Materials Science: Materials in Electronics.

Improved performance of ZnO nanowire field-effect transistors via focused ion beam treatment

Z. Liao, Ya-Qing Bie, Yi Lu, 2011, Nanotechnology.

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Zhitang Song, Sannian Song, Xiaoqin Zhu, 2015, Journal of Materials Science: Materials in Electronics.

Channel Waveguides in Lithium Niobate and Lithium Tantalate

M. Withford, B. Johnston, P. Dekker, 2020, Molecules.

Growth and characterization of lithium niobate planar waveguides by liquid phase epitaxy

P. Dekker, J. Dawes, Yi Lu, 2009 .

SnSb 4 /SiO 2 multilayered thin films for phase change memory applications

Zhitang Song, Yifeng Hu, Xiaoqin Zhu, 2016 .

Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C

M. Hori, M. Sekine, K. Takeda, 2017 .