H. Marchand

发表

Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates

R. Pelzel, O. Laboutin, W. Johnson, 2017 .

Electrical characterization of GaN p-n junctions with and without threading dislocations

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1998 .

Band alignment and barrier height considerations for the quantum-confined Stark effect

J. Currie, P. Desjardins, R. Masut, 1998 .

Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance Imaging

G. Pavlidis, S. Graham, Luke Yates, 2020, IEEE Transactions on Electron Devices.

Metalorganic vapor phase epitaxial growth and structural characterization of self-assembled InAs nanometer-sized Islands on InP(001)

P. Desjardins, R. Masut, S. Guillon, 1997 .

METALORGANIC VAPOR PHASE EPITAXY OF COHERENT SELF-ASSEMBLED INAS NANOMETER-SIZED ISLANDS IN INP(001)

P. Desjardins, R. Masut, S. Guillon, 1997 .

Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire

S. Denbaars, U. Mishra, J. Speck, 1999 .

Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process

S. Denbaars, U. Mishra, J. Speck, 1999 .

Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process

S. Denbaars, U. Mishra, J. Speck, 1998 .

Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction

D. Jena, H. Xing, M. Meneghini, 2020, IEEE Transactions on Electron Devices.

Low-Loss Coplanar Waveguides on GaN-on-Si Substrates

P. Fay, W. Johnson, Lina Cao, 2018, IEEE Microwave and Wireless Components Letters.

Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures

S. Denbaars, U. Mishra, E. Hu, 2000 .

Competing strain relaxation mechanisms in organometallic vapor-phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)

P. Desjardins, R. Masut, H. Marchand, 1998 .

High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers

S. Denbaars, U. Mishra, J. Speck, 1999 .

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

Jaime A. Freitas, James S. Speck, Umesh K. Mishra, 2001 .

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

James S. Speck, Xinru Wu, Umesh K. Mishra, 1998 .

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

John E. Bowers, James S. Speck, Umesh K. Mishra, 1999 .

High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

Umesh K. Mishra, P. Kozodoy, Giacinta Parish, 1999 .

Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction

James S. Speck, Umesh K. Mishra, James Ibbetson, 2000 .

Nanoindentation of laterally overgrown epitaxial gallium nitride

S. Denbaars, G. Parish, L. Faraone, 2012, Electronic Materials Letters.

Thermal conductivity of lateral epitaxial overgrown GaN films

S. Denbaars, D. Clarke, H. Marchand, 1999 .

Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1998 .

Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD

S. Denbaars, S. Keller, U. Mishra, 1998 .

CATHODOLUMINESCENCE MAPPING OF EPITAXIAL LATERAL OVERGROWTH IN GALLIUM NITRIDE

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 1999 .

Band alignment engineering for high speed, low drive field quantum-confined Stark effect devices

J. Currie, P. Desjardins, R. Masut, 1998 .

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Zexuan Zhang, D. Jena, H. Xing, 2022, Applied Physics Letters.

Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

James S. Speck, Umesh K. Mishra, Yuval Golan, 1999 .

Coplanar waveguide performance comparison of GaN-on-Si and GaN-on-SiC substrates

P. Fay, W. Johnson, Lina Cao, 2017, 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)

P. Desjardins, R. Masut, H. Marchand, 1997 .

Optical properties and heterojunction band alignment in fully coherent strain-compensated InAsxP1−x/GayIn1−yP multilayers on InP(001)

M. Beaudoin, P. Desjardins, R. Masut, 2000 .