Ronghui Hao

发表

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Baoshun Zhang, Zhang Zhili, Jie Yuan, 2016 .

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

Baoshun Zhang, Guohao Yu, K. Fu, 2018 .

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Baoshun Zhang, Guohao Yu, K. Fu, 2017 .

Impact of N− plasma treatment on the Current collapse of ALGAN/GAN HEMTs

Baoshun Zhang, Zhili Zhang, Yong Cai, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application

Simon He, A. Xie, H. Chiu, 2021, Semiconductor Science and Technology.

Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment

T. He, Baoshun Zhang, Yanfei Zhao, 2016, Applied Physics Express.

Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment

Baoshun Zhang, Z. Zeng, Guohao Yu, 2019, Applied Physics Express.

Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors

Baoshun Zhang, Guohao Yu, Yong Cai, 2018, Applied Physics Letters.

Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT

Baoshun Zhang, Guohao Yu, K. Fu, 2018, IEEE Transactions on Electron Devices.

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Baoshun Zhang, Shuiming Li, Qian Sun, 2016 .

Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high Vth stability

Baoshun Zhang, F. Lin, Guohao Yu, 2019, Applied Physics Express.

Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas

Baoshun Zhang, Guohao Yu, Jinyan Wang, 2019, Applied Physics Letters.

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Baoshun Zhang, Qi Zhou, Jie Yuan, 2017, IEEE Electron Device Letters.

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Baoshun Zhang, Guohao Yu, K. Fu, 2017 .

An integrated economic-ecological index based on satellite-derived carbon sequestration and carbon price: A case study during 2015–2020 in Shaanxi, China

Ming Liu, Ronghui Hao, Liangzhi Li, 2023, Ecological Indicators.

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

Baoshun Zhang, Xiaodong Zhang, Yong Cai, 2017 .

Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application

S. Yin, D. Marcon, H. Chiu, 2022, 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).