Shichuang Sun

发表

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Baoshun Zhang, Zhang Zhili, Jie Yuan, 2016 .

InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition

Juntao Li, Xuehua Wang, Changqin Chen, 2013, Nanoscale Research Letters.

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Baoshun Zhang, Guohao Yu, K. Fu, 2017 .

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

Wei Huang, Baoshun Zhang, Yong Cai, 2015, IEEE Electron Device Letters.

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Baoshun Zhang, Shuiming Li, Qian Sun, 2016 .

AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Zhili Zhang, Yanfei Zhao, Guohao Yu, 2017, IEEE Electron Device Letters.

Defect reduction in Si-doped Al0.45Ga0.55N films by SiNx interlayer method

J. Dai, Changqin Chen, W. Tian, 2014 .

Effects of Al0.3Ga0.7As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs/Ge grown by MOCVD

Chaoji Chen, Feng Wu, J. Dai, 2014 .

Improved Optical Performance of InAs Quantum Dot Structure via Suitable Manipulation of GaAs Cap Layer Growth

J. Dai, Changqin Chen, Wei Zhang, 2015, Journal of Electronic Materials.

Optical performance improvement of GaN/AlN quantum dots via a two-step grown caplayer

Li Senlin, J. Dai, Changqin Chen, 2015 .

Influence of high-temperature postgrowth annealing under different ambience on GaN quantum dots grown via Ga droplet epitaxy

Li Senlin, J. Dai, Changqin Chen, 2015 .

Terahertz intersubband transition in GaN/AlGaN step quantum well

Wu Tian, Jun Zhang, Feng Wu, 2013 .

Optical properties of the nonpolar a-plane MgZnO films grown on a-GaN/r-sapphire templates by pulsed laser deposition

Mingkai Li, Yunbin He, Feng Wu, 2014 .

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer

Wei Huang, Baoshun Zhang, Yong Cai, 2016, IEEE Transactions on Electron Devices.

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Baoshun Zhang, Guohao Yu, K. Fu, 2017 .

Large-scale growth of density-tunable aligned ZnO nanorods arrays on GaN QDs

J. Dai, Changqin Chen, Wei Zhang, 2015, Nanotechnology.

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

Baoshun Zhang, Xiaodong Zhang, Yong Cai, 2017 .

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Baoshun Zhang, Shuiming Li, Qian Sun, 2016 .