W. H. Tham

Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon

W. H. Tham, 2016 .

Gold-free contacts on AlxGa1-xN/GaN high electron mobility transistor structure grown on a 200-mm diameter Si(111) substrate

S. L. Teo, H. Tan, L. Bera, 2016 .

Al $x$ Ga1–xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate

L. Bera, D. Ang, T. Bhat, 2015, IEEE Electron Device Letters.

Comparison of the AlxGa1–xN/GaN Heterostructures Grown on Silicon-on-Insulator and Bulk-Silicon Substrates

L. Bera, S. Tripathy, D. Ang, 2016, IEEE Transactions on Electron Devices.