Fang Yulong

发表

GaN planar Schottky barrier diode with cut-off frequency of 902 GHz

Zhihong Feng, Junlong Wang, G. Gu, 2016 .

Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection

Qi Zhou, B. Zhang, A. Zhang, 2015 .

Ti/Al Based Ohmic Contact to As-Grown N-Polar GaN

S. Dun, Y. Lv, Zhihong Feng, 2015 .

Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Zhaojun Lin, S. Cai, S. Dun, 2013 .

Effect of Dy Content on Microwave Absorption Properties of Pr 2 Fe 17 Alloy

Cheng Lichun, Fang Yulong, Pan Shun-kang, 2017 .

High-frequency AlGaN/GaN HFETs with f T/f max of 149/263 GHz for D-band PA applications

Y. Lv, Zhihong Feng, Hongyu Guo, 2016 .

High‐frequency InAlN/GaN HFET with f max over 400 GHz

Xingchang Fu, Y. Lv, Zhihong Feng, 2018, Electronics Letters.

A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

Feng Zhihong, Yin Jiayun, Fang Yulong, 2011 .

Trap behaviors in AlGaN/GaN based polarization-doped field effect transistors by frequency-dependent conductance–voltage characterizations

S. Cai, Jianchao Guo, Chengming Li, 2015 .

High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

S. Cai, Chengming Li, Y. Lv, 2015 .