M. Chauvat

发表

Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission

P. Ruterana, K. Lorenz, M. Chauvat, 2015 .

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy

P. Ruterana, X. Wallart, D. Troadec, 2014, Nanotechnology.

Porous Nitride Light-Emitting Diodes

P. Ruterana, S. Vézian, B. Damilano, 2022, ACS Photonics.

Atomic Core Structures Associated to the Threading Dislocation with Burgers Vector and [0001] Line Direction in GaN

P. Ruterana, J. Koulidiati, A. Béré, 2013 .

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

E. Monroy, P. Ruterana, E. Alves, 2014, 1410.5659.

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

K. Kheng, E. Monroy, P. Ruterana, 2016, 1610.07413.

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

P. Ruterana, X. Wallart, D. Troadec, 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

P. Ruterana, P. Šiffalovič, J. Kuzmík, 2019, Journal of Applied Physics.

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

P. Ruterana, N. Grandjean, A. Dussaigne, 2011 .

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

S. Delage, P. Ruterana, Jun Chen, 2019, Journal of Applied Physics.

Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

P. Ruterana, B. Lacroix, P. Mierry, 2011 .

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano, P. Valvin, M. Tchernycheva, 2022, Journal of Applied Physics.

Effective absorption correction for energy dispersive X‐ray mapping in a scanning transmission electron microscope: analysing the local indium distribution in rough samples of InGaN alloy layers

T. Walther, P. Ruterana, M. Chauvat, 2017, Journal of microscopy.

Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

T. Walther, P. Ruterana, M. Chauvat, 2015 .

Molecular beam epitaxy of semipolar AlN($$11\bar{2}2$$) and GaN($$11\bar{2}2$$) on m-sapphire

E. Monroy, P. Ruterana, E. Bellet-Amalric, 2008 .

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

P. Ruterana, E. Alves, K. Lorenz, 2016 .

Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

X. Portier, F. Gourbilleau, J. Rueff, 2022, Surfaces and Interfaces.

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

P. Ruterana, J. Kuzmík, S. Hasenöhrl, 2020 .

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by

P. Šiffalovič, J. Kuzmík, F. Gucmann, 2019 .

Epitaxial Growth of Sputtered Ultra-Thin NbN Layers and Junctions on Sapphire

P. Ruterana, C. Jorel, L. Mechin, 2009, IEEE Transactions on Applied Superconductivity.

Implantation damage formation in a-, c- and m-plane GaN

P. Ruterana, E. Alves, E. Wendler, 2017 .

SrTiO3 surface micro-structuring with swift heavy ions in grazing incidence geometry

I. Monnet, C. Grygiel, M. Chauvat, 2023, Materialia.

PAMBE growth of (1 1 2- 2)-oriented GaN/AlN nanostructures on m-sapphire

Julien Renard, Eva Monroy, M. P. Chauvat, 2009, Microelectron. J..

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN"112 ¯ 2…: Effect on the structural and optical properties

Eva Monroy, Pierre Ruterana, Bruno Gayral, 2008 .

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

F. Julien, E. Monroy, P. Ruterana, 2013 .

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

E. Monroy, P. Ruterana, E. Alves, 2014, 1410.5659.

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

E. Monroy, P. Ruterana, K. Kheng, 2016, 1610.07413.

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

P. Ruterana, M. Morales, A. Minj, 2017, Journal of microscopy.

Defect structure in heteroepitaxial semipolar () (Ga, Al)N

E. Monroy, P. Ruterana, Y. Arroyo Rojas Dasilva, 2010, Journal of physics. Condensed matter : an Institute of Physics journal.

Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors

P. Ruterana, K. Lorenz, M. Chauvat, 2013 .

The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells

P. Ruterana, B. Damilano, B. Gil, 2017, Journal of microscopy.

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

D. V. Dinh, M. Kneissl, P. Ruterana, 2014 .

Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres

Ye. F. Venger, X. Portier, L. Khomenkova, 2020, Semiconductor Science and Technology.

Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures

P. Ruterana, J. Kuzmík, R. Stoklas, 2018, Applied Physics Express.

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

P. Ruterana, M. Tordjman, A. Minj, 2017 .

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

P. Ruterana, E. Alves, J. Rodrigues, 2018, Surface and Coatings Technology.

InAlGaN/GaN HEMTs at Cryogenic Temperatures

P. Ruterana, F. Medjdoub, M. Tordjman, 2016 .

Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications

Michael Heuken, Arantxa Vilalta-Clemente, Magali Morales, 2010, OPTO.

Interface dislocations in InxGa1–xN/GaN heterostructures

P. Ruterana, J. Chen, A. Minj, 2016 .

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

M. Eickhoff, E. Monroy, P. Ruterana, 2009 .

Investigation of InN layers grown by molecular beam epitaxy on GaN templates

F. Calle, J. Grandal, M. Sánchez-García, 2010 .

High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2 /YSZ-based buffered silicon substrates

P. Ruterana, L. Méchin, P. Perna, 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

Optimized ohmic contacts for InAlGaN/GaN HEMTs

S. Delage, P. Ruterana, F. Medjdoub, 2022, International Conference on Advanced Semiconductor Devices and Microsystems.

Extended defects in nitride layers, influence on the quantum wells and quantum dots

E. Monroy, P. Ruterana, M. P. Chauvat, 2010, OPTO.