Nakaaki Yoshihara

Native and process induced defects in GaN films grown on Si substrates probed using a monoenergetic positron beam

A. Uedono, Yu Cao, T. Palacios, 2014, 2014 International Workshop on Junction Technology (IWJT).

Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam

A. Uedono, T. Palacios, T. Fujishima, 2014 .

Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam

A. Uedono, Yu Cao, T. Palacios, 2014 .

Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam

A. Uedono, T. Palacios, T. Fujishima, 2014 .

Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams

Takayuki Ohba, Nagayasu Oshima, Ryoichi Suzuki, 2014 .

Vacancies in InxGa1−xN/GaN multiple quantum wells fabricated on m-plane GaN probed by a monoenergetic positron beam

A. Uedono, S. Nagao, S. Ishibashi, 2015 .