A. Titov

发表

Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation

K. Nordlund, F. Djurabekova, M. W. Ullah, 2013 .

Molecular effect on surface topography of GaN bombarded with PF4 ions

S. Kucheyev, A. Azarov, A. Arkhipov, 2012 .

Model for radiation damage buildup in GaN

S. Kucheyev, A. Azarov, P. Karaseov, 2012 .

Delta-Doping of Monocrystalline Semiconductors by Al and Sb Implantation Using FIB Resistless Lithography

E. E. Zhurkin, V. Zhukov, A. Titov, 2004 .

Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions

P. Karaseov, I. Kolesnikov, K. Karabeshkin, 2020 .

Using a chromatic-aberration correction system to achieve sub-1.6-nm resolutions of a focused-ion-beam microscope designed for characterization and processing

V. Zhukov, A. Titov, A. V. Zav’yalova, 2007 .

The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors

G. Carter, M. Nobes, C. Christodoulides, 1980 .

The effect of diborane additive on the plasma-chemical properties of deposited carbon films

O. A. Podsvirov, A. Vinogradov, E. N. Shubina, 2017 .

Evaluation of focused O+ ion beams as a tool for making resist masks by reactive etching

M. M. Nesterov, V. Zhukov, A. Titov, 2006 .

Ranges of 10-350 keV H and H 2 ions in (1 1 1) diamond

Yuri N. Palyanov, G. P. Pokhil, V. Popov, 2017 .

Interplay of the disorder and strain in gallium oxide

A. Azarov, P. Karaseov, K. Karabeshkin, 2022, Scientific reports.

Swift heavy ion irradiation of metal containing tetrahedral amorphous carbon films

J. Koskinen, P. Karaseov, E. N. Shubina, 2016 .

Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN

K. Nordlund, F. Djurabekova, M. W. Ullah, 2012 .

Molecular effect in semiconductors under heavy-ion bombardment: Quantitative approach based on the concept of nonlinear displacement spikes

S. Kucheyev, V. S. Belyakov, A. Titov, 2002 .

DAMAGE ACCUMULATION IN SI DURING N+ AND N2+ BOMBARDMENT ALONG RANDOM AND CHANNELING DIRECTIONS

S. Kucheyev, A. Titov, 1999 .

Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations

G. M. Ermolaeva, V. B. Shilov, K. Nordlund, 2017 .

Experimental study and MD simulation of damage formation in GaN under atomic and molecular ion irradiation

K. Nordlund, F. Djurabekova, M. W. Ullah, 2016 .

Effect of pre-existing disorder on surface amorphization in GaN

S. Kucheyev, A. Azarov, A. Titov, 2010 .

Positron energy distribution in a factorized trident process

B. Kämpfer, A. Titov, U. Acosta, 2021, Physical Review A.

Stationary amorphous layer formation during 5 keV Ar+ ion bombardment of Ge

V. S. Belyakov, A. Titov, 1996 .

Effects of the density of collision cascades: Separating contributions from dynamic annealing and energy spikes

S. Kucheyev, A. Azarov, P. Karaseov, 2009 .

Effect of collision cascade density on radiation damage in SiC

A. Hallén, A. Azarov, P. Karaseov, 2009 .

Energy spike effects in ion-bombarded GaN

S. Kucheyev, A. Azarov, P. Karaseov, 2009 .

Damage buildup and the molecular effect in Si bombarded with PFn cluster ions

S. Kucheyev, A. Azarov, A. Titov, 2007 .

Mechanism for the molecular effect in Si bombarded with clusters of light atoms

S. Kucheyev, A. Azarov, A. Titov, 2006 .

Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory

A. Azarov, V. S. Belyakov, A. Titov, 2003 .

Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

S. Kucheyev, A. Azarov, V. S. Belyakov, 2001 .

Effect of the density of collision cascades on implantation damage in GaN

S. Kucheyev, C. Jagadish, Gang Li, 2001 .

Synthesis and tailoring of GaN nanocrystals at room temperature by RF magnetron sputtering

A. Pathak, A. Titov, N. Rao, 2012 .

Model for electrical isolation of GaN by light-ion bombardment

S. Kucheyev, A. Titov, 2002 .

Electronic stopping dependence of ion beam induced modifications in GaN

A. Titov, N. Rao, G. Devaraju, 2011 .

Accumulation of structural defects in silicon irradiated with PFn+ cluster ions with medium energies

A. Azarov, A. Titov, 2007 .

Effect of ion species on the accumulation of ion-beam damage in GaN

Chennupati Jagadish, Jin Zou, Sergei O. Kucheyev, 2001 .

Ion beam induced amorphous-crystalline phase transition in Si: Quantitative approach

S. Kucheyev, A. Titov, 2000 .

The role of point defects generated in the crystalline region in ion beam induced epitaxial crystallization of silicon

V. S. Belyakov, A. Titov, G. Farrell, 1996 .

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

P. Karaseov, V. Nikolaev, D. Gogova, 2022, Vacuum.

Furthering the understanding of ion-irradiation-induced electrical isolation in wide band-gap semiconductors

S. Kucheyev, P. Karaseov, A. Titov, 2006 .

Residual stress in diamond-like carbon films: Role of growth conditions and ion irradiation

O. A. Podsvirov, A. Azarov, P. Karaseov, 2010 .

Defect accumulation during room temperature N+ irradiation of silicon

G. Carter, A. Titov, 1996 .

Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN

G. M. Ermolaeva, V. B. Shilov, P. Karaseov, 2019, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Influence of ion irradiation on internal residual stress in DLC films

O. A. Podsvirov, A. Azarov, P. Karaseov, 2010 .

Damage buildup in semiconductors bombarded by low-energy ions

A. Azarov, V. S. Belyakov, A. Titov, 2006 .

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

A. Azarov, P. Karaseov, K. Karabeshkin, 2022, Journal of Physics D: Applied Physics.

Degradation of GaN Conductivity Under Irradiation with Swift Ions

Ashish Kumar, K. Asokan, D. Kanjilal, 2020 .

Effect of the density of collision cascades on ion implantation damage in ZnO

S. Kucheyev, A. Azarov, P. Karaseov, 2007 .

Damage formation in Si under irradiation with PFn+ ions of different energies

P. Karaseov, K. Karabeshkin, A. Titov, 2013, Semiconductors (Woodbury, N.Y.).

The depth distribution of disorder produced by room temperature 40 keV N+ ion irradiation of silicon

G. Carter, M. Nobes, C. Christodoulides, 1979 .

Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Ion Bombardment

P. Karaseov, K. Karabeshkin, A. Titov, 2023, Semiconductors.

Damage formation in Si under irradiation with PFn+ ions of different energies

P. Karaseov, K. Karabeshkin, A. Titov, 2013 .

Molecular Effect in Damage Formation in β-Ga2O3

A. Azarov, P. Karaseov, D. Gogova, 2022, Springer Proceedings in Physics.

Influence of ion bombardment on residual stresses in diamond-like carbon films

O. A. Podsvirov, A. Azarov, A. Vinogradov, 2009 .

Nonlinear optical effect upon the irradiation of GaN with cluster ions

G. M. Ermolaeva, V. B. Shilov, P. Karaseov, 2014 .

Effect of collision cascade density on swelling and surface topography of GaN

S. Kucheyev, A. Arkhipov, P. Karaseov, 2013 .

Impact of Chemical Effects on Topography and Thickness of Modified GaN Surface Layers Bombarded by F and Ne Ions

A. Azarov, A. Arkhipov, P. Karaseov, 2020 .

Interplay of the disorder and strain in gallium oxide

A. Azarov, P. Karaseov, K. Karabeshkin, 2022, Scientific Reports.

A model of electrical isolation in GaN and ZnO bombarded with light ions

S. Kucheyev, A. Titov, P. A. Karasev, 2004 .