A. V. Govorkov

Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors

Yu Cao, Stephen J. Pearton, N. B. Smirnov, 2012 .

Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types

R. V. Ryzhuk, In‐Hwan Lee, A. Polyakov, 2014, IEEE Transactions on Nanotechnology.

Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions

N. B. Smirnov, V. S. Ermakov, R. V. Ryzhuk, 2013 .

Scanning electron microscopy studies of double-layer silicon structures prepar by epitaxy and direct bonding

A. V. Govorkov, M. G. Mil’vidskiĭ, K. Enisherlova, 2006 .

Deep traps and thermal measurements on AlGaN/GaN on Si transistors

N. B. Smirnov, F. Ren, S. Pearton, 2011 .

Device structures on porous silicon studied by scanning electron microscopy in the electron‐beam current mode

E. Katz, L. Balagurov, E. A. Petrova, 1996 .