T. Aschenbrenner

发表

H. Geffers, J. Flege, J. Falta, 2011 .

Asymmetric skew X-ray diffraction at fixed incidence angle: application to semiconductor nano-objects

T. Baumbach, D. Schaadt, D. Hommel, 2016 .

Highly ordered catalyst-free and mask-free GaN nanorods on r-plane sapphire

T. Voss, S. Figge, D. Hommel, 2009, Nanotechnology.

The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes

V. Ursaki, I. Tiginyanu, D. Hommel, 2013 .

Nitride based heterostructures with Ga- and N-polarity for sensing applications

S. Figge, D. Hommel, A. Rosenauer, 2013 .

Growth of AlN by pulsed and conventional MOVPE

S. Figge, D. Hommel, T. Aschenbrenner, 2013 .

Microscopic theory of photoluminescence from semiconductor quantum dots in microcavities

A. Forchel, M. Lorke, M. Bayer, 2005, 2005 Quantum Electronics and Laser Science Conference.

Wave guide optimization for homoepitaxial laser diodes

S. Figge, D. Hommel, T. Aschenbrenner, 2007 .

Optical properties of InGaN quantum dots in monolithic pillar microcavities

M. Seyfried, F. Jahnke, S. Figge, 2010 .

Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity

S. Figge, D. Hommel, A. Rosenauer, 2011 .

Blue monolithic II-VI-based vertical-cavity surface-emitting laser

M. Seyfried, D. Hommel, K. Sebald, 2012 .

Influence of Static Atomic Displacements on Composition Quantification of AlGaN/GaN Heterostructures from HAADF-STEM Images

D. Hommel, A. Rosenauer, F. Krause, 2014, Microscopy and Microanalysis.

InGaN quantum dot growth in the limits of Stranski–Krastanov and spinodal decomposition

S. Figge, D. Hommel, C. Tessarek, 2011 .

A structural investigation of highly ordered catalyst- and mask-free GaN nanorods

S. Figge, D. Hommel, A. Rosenauer, 2011, Nanotechnology.

Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods

K. Thonke, S. Figge, D. Hommel, 2011, Nanotechnology.

Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots

Detlef Hommel, Andreas Rosenauer, M. Seyfried, 2011 .

Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction.

U. Pietsch, T. Baumbach, L. Geelhaar, 2015, Journal of synchrotron radiation.

Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies

E. Guziewicz, M. Godlewski, D. Hommel, 2013 .

Optical and structural characterization of AlInN layers for optoelectronic applications

M. Stoica, T. Wagner, M. Anastasescu, 2010 .

Microstructural and compositional analyses of GaN‐based nanostructures

C. Kübel, J. Falta, T. Schmidt, 2011 .

Optical Properties and Modal Gain of InGaN Quantum Dot Stacks

S. Figge, D. Hommel, C. Tessarek, 2008, 0812.0301.

Influence of a low-temperature capping on the crystalline structure and morphology of InGaN quantum dot structures

J. Falta, T. Baumbach, R. Magalhães-Paniago, 2014 .

Direct MOVPE- and MBE-growth of a-plane GaN on r-plane sapphire

S. Figge, D. Hommel, C. Kruse, 2008 .

Catalyst free self‐organized grown high‐quality GaN nanorods

S. Figge, D. Hommel, A. Rosenauer, 2011 .

TEM characterization of catalyst- and mask-free grown GaN nanorods

D. Hommel, A. Rosenauer, M. Schowalter, 2010 .

Photoluminescence and structural analysis of a-plane InGaN layers

S. Figge, D. Hommel, A. Rosenauer, 2008 .

Growth and characterization of nitride‐based distributed Bragg reflectors

S. Figge, D. Hommel, C. Kruse, 2011 .