M. Wośko

发表

Properties of GaN layers deposited on AlN/sapphire template substrates

J. Misiewicz, M. Tlaczala, J. Prażmowska, 2009 .

Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al2O3, Si and SiC substrates

R. Paszkiewicz, B. Paszkiewicz, T. Szymański, 2016 .

GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

R. Paszkiewicz, B. Paszkiewicz, A. Vincze, 2015 .

Optimization of AlGaN/GaN/Si(111) buffer growth conditions for nitride based HEMTs on silicon substrates

R. Paszkiewicz, B. Paszkiewicz, T. Szymański, 2015 .

Different buffer approaches for AlGaN/GaN heterostructures epitaxy on Si(111) substrates

R. Paszkiewicz, B. Paszkiewicz, T. Szymański, 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.

Influence of materials grain structure on the performance of optoelectronic devices

M. Tlaczala, A. Szyszka, B. Paszkiewicz, 2005 .

Optimisation of LT-GaN nucleation layer growth conditions for the improvement of electrical and optical parameters of GaN layers

M. Wośko, 2001 .

Metalorganic vapour-phase epitaxy of AlGaN/GaN heterostructures on chlorine plasma etched GaN templates without buried conductive layer

A. Stafiniak, Joanna Prażmowska-Czajka, R. Paszkiewicz, 2020 .

Properties of MOVPE GaN grown on ZnO deposited on Si(0 0 1) and Si(1 1 1) substrates

M. Tlaczala, J. Prażmowska, A. Szyszka, 2008 .

Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal–organic vapour phase epitaxy

R. Paszkiewicz, B. Paszkiewicz, M. Wzorek, 2016 .

Influence of AlN Buffer Layer Deposition Temperature οn Properties of GaN HVPE Layers

M. Tlaczala, J. Kováč, J. Prażmowska, 2009 .

Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer

J. Misiewicz, M. Tlaczala, R. Kudrawiec, 2014 .

Influence of high Al fraction on reactive ion etching of AlGaN/GaN heterostructures

A. Stafiniak, J. Prażmowska, B. Paszkiewicz, 2013 .

New nanocrystalline powder substrates for nitrides layer epitaxy

G. Sȩk, J. Misiewicz, M. Tlaczala, 2008 .

A(III)B(V) detectors with graded active region

G. Sȩk, J. Misiewicz, B. Ściana, 2008 .

Precise etching of AlGaN/GaN HEMT structures with Cl2/BCL3/Ar plasma

A. Stafiniak, R. Paszkiewicz, W. Macherzyński, 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.

Light-assisted scanning probe microscopy characterization of the electrical properties of AlGaN/GaN/Si heterostructures

A. Szyszka, R. Paszkiewicz, M. Wośko, 2021 .

Parasitic masking effect in GaN SA-MOVPE using SiO2 masks deposited by the PECVD technique

A. Stafiniak, Joanna Prażmowska-Czajka, R. Paszkiewicz, 2023, Materials Science in Semiconductor Processing.

Applications of functionally graded materials in optoelectronic devices

Marek Tłaczała, Mateusz Wośko, Regina Paszkiewicz, 2005 .

Functionally Graded Structures of AIII-BV(N) Materials for Detectors

M. Tlaczala, J. Prażmowska, A. Szyszka, 2006, 2006 International Students and Young Scientists Workshop - Photonics and Microsystems.

AlGaN/GaN Heterostructures Electrical Performance by Altering GaN/Sapphire Buffers Growth Pressure and Low‐Temperature GaN Interlayers Application

R. Paszkiewicz, B. Paszkiewicz, M. Wośko, 2021, Crystal Research and Technology.

Reverse engineering of AlxGa1−xAs/GaAs structures composition by reflectance spectroscopy

B. Ściana, D. Radziewicz, M. Tlaczala, 2011 .

The influence of MOVPE process parameters on the buffer resistivity used in AlGaN/GaN heterostructures

R. Paszkiewicz, T. Szymański, M. Wośko, 2013, Electron Technology Conference.

Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers

B. Ściana, M. Tlaczala, R. Paszkiewicz, 2009 .

MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications

R. Paszkiewicz, B. Paszkiewicz, T. Szymański, 2019, Journal of Materials Science: Materials in Electronics.

Growth Uniformity in Selective Area Epitaxy of AlGaN/GaN Heterostructures for the Application in Semiconductor Devices

A. Stafiniak, Joanna Prażmowska-Czajka, R. Paszkiewicz, 2020, Electronics.

Surface electrical characterization of defect related inhomogeneities of AlGaN/GaN/Si heterostructures using scanning capacitance microscopy

A. Szyszka, R. Paszkiewicz, B. Paszkiewicz, 2019, Materials Science in Semiconductor Processing.

Inter-digitated AlGaN/GaN Schottky diode for monolithic integration

M. Tlaczala, R. Paszkiewicz, B. Paszkiewicz, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.

Study of the activation process of Mg dopant in GaN:Mg layers

M. Syperek, J. Misiewicz, M. Tlaczala, 2006 .

Application and modeling of functionally graded materials for optoelectronic devices

B. Paszkiewicz, R. Paszkiewicz, M. Tlaczala, 2005, Proceedings of 2005 International Students and Young Scientists Workshop Photonics and Microsystems, 2005..

Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

R. Paszkiewicz, B. Paszkiewicz, M. Drzik, 2015 .

Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques

M. Tlaczala, A. Szyszka, B. Paszkiewicz, 2013 .