J. Shiu

Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

H. Zirath, N. Rorsman, T. Makimoto, 2007, IEEE Electron Device Letters.

Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures

H. Zirath, N. Rorsman, V. Desmaris, 2006 .

Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs

H. Zirath, N. Rorsman, V. Desmaris, 2008 .

Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation

H. Zirath, N. Rorsman, E. Chang, 2010 .

Molecular carbon implant technology for ultra-shallow junction formation and n-MOSFET strain application in a 40nm node logic device

M. Ameen, D. Tieger, J. Shiu, 2009, 2009 International Workshop on Junction Technology.

DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx

H. Zirath, N. Rorsman, V. Desmaris, 2007 .