S. Yao

发表

Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering

B. Zhang, H. Yang, Shengqiang Zhou, 2006 .

Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction

Z. Feng, Hao-Hsiung Lin, T. Fa, 2011 .

An approach to determine the chemical composition in InGaN/GaN multiple quantum wells

Z. J. Yang, Tongjun Yu, G. Y. Zhang, 2004 .

The strain reduction and quality improvement in ZnO film by a 30° in-plane rotation with respect to the Al2O3 substrate

Shengqiang Zhou, Y. M. Lu, M. F. Wu, 2006 .

Structural Analysis of In x Ga 1−x N/GaN MQWs by Different Experimental Methods

F. Pan, Z. Feng, T. Fa, 2011 .

The correlation between structure and magnetism of Ni-implanted TiO2 annealed at different temperatures

F. Pan, Shengqiang Zhou, T. Fa, 2012 .

Tailoring the magnetism of GaMnAs films by ion irradiation

M. Helm, A. Rushforth, D. Bürger, 2010, Journal of Physics D: Applied Physics.

Characterization and local magnetic modification of ion irradiated GaMnAs

M. Helm, A. Rushforth, H. Schmidt, 2011 .

Elastic strain in Mg0.28Zn0.72O layer: Combined Rutherford backscattering/channeling and X-ray diffraction

S. Yao, Kun Wang, Z. Ding, 2007 .

Room temperature Er3+ 1.54 µm electroluminescence from Si-rich erbium silicate deposited by magnetron sputtering

G. Qin, G. Ran, S. Yao, 2010 .

Investigation on the different barrier effect of Ni and Pt in the Ti/Al/Pt/Au and Ti/Al/Ni/Au contacts to n-type GaN

Z. J. Yang, Z. Qin, Z. Z. Chen, 2007 .

Influence of the Pt barrier on Ti/Al/Pt/Au ohmic contacts to n-GaN studied by Rutherford backscattering spectrometry and x-ray diffraction

Z. J. Yang, Z. Z. Chen, X. D. Hu, 2006 .

Ohmic contact mechanism of Ni/Au contact to p-type GaN studied by Rutherford backscattering spectrometry

Z. J. Yang, Z. Qin, Z. Z. Chen, 2007 .

Correlation of contact resistance with metal diffusion for oxidized Au/Ni/p-GaN contacts studied using Rutherford backscattering spectroscopy

Z. J. Yang, Z. Qin, Z. Z. Chen, 2006 .

Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

Xiaodong Hu, Z. Qin, Z. Z. Chen, 2006 .

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Y. Li, Z. Feng, Hao-Hsiung Lin, 2018, Crystals.

Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction

Zhenxing Feng, S. Yao, L. Hou, 2005 .

Influence of oxygen pressure on elastic strain and excitonic transition energy of ZnO epilayers prepared by pulsed laser deposition

Hui Zhang, S. Yao, F. Xiong, 2008 .

All-epitaxial growth of single-crystalline Ba0.6Sr0.4TiO3/Ir/MgO/Si heterostructures

T. Chen, S. Yao, X. Li, 2005 .

Structural, optical, and magnetic properties of Cu-implanted GaN films

Kang L. Wang, Z. J. Yang, C. D. Wang, 2009 .

Effects of crystallinity and point defects on optoelectronic applications of β-Ga₂O₃ epilayers.

L. Tu, H. Lee, R. Horng, 2013, Optics express.

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Tianxiang Chen, S. Yao, W. Hua, 2008 .

Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

Kuei-Hsien Chen, Z. Feng, S. Yao, 2011 .

Structural, optical and magnetic properties of Co-doped ZnO films

Hua-Wei Zhang, Huan Wang, Lixin Song, 2006 .

Elastic strain in InGaN and AlGaN layers

I. Moerman, A. Vantomme, G. Langouche, 2000 .

Defect induced ferromagnetism in 4H–SiC single crystals

L. Shao, Shengqiang Zhou, S. Prucnal, 2012 .

Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metallic organic chemical vapor deposition

I. Ferguson, D. Talwar, J. Zhai, 2018, Optical Materials Express.

Tuning of the tetragonal distortion in AlInGaN thin films by different contents of Al and In

Huan Wang, S. Yao, 2014 .

Strain in GaAsSb quantum well studied by X-ray diffraction and Rutherford backscattering/channeling

Shengqiang Zhou, S. Yao, Ming-fang Wu, 2011 .

Chemical composition and elastic strain in AlInGaN quaternary films

Shude Yao, J. P. Liu, Shengqiang Zhou, 2006 .

High precision determination of the elastic strain of InGaN/GaN multiple quantum wells

G. Tendeloo, Shengqiang Zhou, A. Vantomme, 2004 .

Structural characterization and elastic strain of InGaN/GaN multiple quantum wells

Shengqiang Zhou, S. Yao, Y. Tong, 2003, Proceedings of the Sixth Chinese Optoelectronics Symposium (IEEE Cat. No.03EX701).

Optimizing the growth of CoSi2 film with oxide-mediated CoSi2 template by silicon cap layer

D. Smeets, A. Vantomme, M. Xu, 2009 .

Depth dependent tetragonal distortion of a GaN epilayer with an AlN interlayer on Si(111) studied by Rutherford backscattering/channeling

S. Yao, L. Hou, Huan-Hua Wang, 2014 .

Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction

A. Vantomme, G. Langouche, Guoyi Zhang, 1999 .

Characterization of tetragonal distortion in a thick Al 0.2 Ga 0.8 N epilayer with an AlN interlayer by Rutherford backscattering/channeling

Huan Wang, S. Yao, 2014 .

DEPTH-DEPENDENT TETRAGONAL DISTORTION STUDY OF AlGaN EPILAYER THIN FILM USING RBS AND CHANNELING TECHNIQUE

C. Dee, A. A. Umar, I. Ahmad, 2012 .

Strain-free Al0.08In0.018Ga0.902N/GaN heterostructure: Combined Rutherford backscattering/channeling and high resolution X-ray diffraction

Tianxiang Chen, Huan Wang, S. Yao, 2008 .

Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling

T. Fa, Xinqiang Wang, S. Yao, 2012 .

Structural and magnetic properties of Co+ implanted n-GaN dilute magnetic semiconductors

G. Husnain, S. Yao, Fa Tao, 2010 .

The Defects, Grain Size and Electrical Property in the Non‐stoichiometric BaTiO3 Ceramics

S. Yao, C. Q. Tang, 2000 .

Investigation on the structural and magnetic properties of Co+ implanted rutile TiO2

F. Pan, Shengqiang Zhou, K. Potzger, 2012 .

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

Xiaodong Hu, Z. Qin, Huan Wang, 2007 .

Dependence of the Electric Properties and the Positron Lifetimes on the Dopant Content in La‐doped SrTiO3

Z. Xia, Shou-Mian. Chen, S. Yao, 1996 .

Structural study of YSi1.7 layers formed by channeled ion beam synthesis

A. Vantomme, G. Langouche, H. Pattyn, 1998 .

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

T. Fa, E. Fu, S. Yao, 2015 .

Rise and fall of defect induced ferromagnetism in SiC single crystals

A. Wagner, Shengqiang Zhou, S. Prucnal, 2011, 1106.0966.

Modification of the electrical properties of polyimide by irradiation with 80 keV Xe ions

Shengqiang Zhou, Tianxiang Chen, Huan Wang, 2009 .

The modification of mechanical properties by 2 MeV Si ions irradiating polyimide

Tianxiang Chen, Huan Wang, S. Yao, 2008 .

Structural, Morphology and Optical Properties of Epitaxial ZnO Films Grown on Al2O3 by MOCVD

Shengqiang Zhou, F. Jiang, S. Yao, 2006 .